No. |
Part Name |
Description |
Manufacturer |
211 |
1N5406RL |
3A 600V Standard Recovery Rectifier |
ON Semiconductor |
212 |
1SS406 |
Small-signal Schottky barrier diode |
TOSHIBA |
213 |
1T406 |
Variable Capacitance Diode |
SONY |
214 |
23226406 |
NTC Thermistors, Accuracy Line |
Vishay |
215 |
285D406X0050G4 |
TYPE 285D Foil Tantalum Replacement |
Vishay |
216 |
285D406X0075G5 |
TYPE 285D Foil Tantalum Replacement |
Vishay |
217 |
2N1406 |
Germanium PNP Transistor |
Motorola |
218 |
2N3406 |
UNIJUNCTION TRANSISTOR |
Motorola |
219 |
2N3406 |
Silicon NPN Transistor |
Motorola |
220 |
2N406 |
Germanium PNP Transistor |
Motorola |
221 |
2N4060 |
SILICON AF SMALL SIGNAL TRANSISTORS |
Micro Electronics |
222 |
2N4060 |
Silicon PNP Transistor |
Motorola |
223 |
2N4060 |
Trans GP BJT PNP 30V 0.2A 3-Pin TO-92 |
New Jersey Semiconductor |
224 |
2N4061 |
SILICON AF SMALL SIGNAL TRANSISTORS |
Micro Electronics |
225 |
2N4061 |
Silicon PNP Transistor |
Motorola |
226 |
2N4061 |
BJT |
New Jersey Semiconductor |
227 |
2N4062 |
SILICON AF SMALL SIGNAL TRANSISTORS |
Micro Electronics |
228 |
2N4062 |
Silicon PNP Transistor |
Motorola |
229 |
2N4062 |
BJT |
New Jersey Semiconductor |
230 |
2N4063 |
High-voltage silicon N-P-N planar transistor. |
General Electric Solid State |
231 |
2N4063 |
Silicon NPN Transistor |
Motorola |
232 |
2N4063 |
Trans GP BJT PNP 30V 0.2A 3-Pin TO-92 |
New Jersey Semiconductor |
233 |
2N4064 |
High-voltage silicon N-P-N planar transistor. |
General Electric Solid State |
234 |
2N4064 |
Silicon NPN Transistor |
Motorola |
235 |
2N4064 |
Trans GP BJT PNP 30V 0.2A 3-Pin TO-92 |
New Jersey Semiconductor |
236 |
2N4065 |
P-Channel MOS (Field-Effect Transistor) |
Motorola |
237 |
2N4066 |
P-Channel MOS (Field-Effect Transistor) |
Motorola |
238 |
2N4067 |
P-Channel MOS (Field-Effect Transistor) |
Motorola |
239 |
2N4068 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
240 |
2N4068 |
Silicon NPN Transistor |
Motorola |
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