| No. |
Part Name |
Description |
Manufacturer |
| 211 |
2SC4081FRAT106 |
NPN General Purpose Amplification Transistor (Corresponds to AEC-Q101) |
ROHM |
| 212 |
2SC4081RT1 |
General Purpose Amplifier Transistor |
ON Semiconductor |
| 213 |
2SC4081T106 |
NPN General Purpose Amplification Transistor |
ROHM |
| 214 |
2SC4081UB |
NPN General Purpose Amplification Transistor |
ROHM |
| 215 |
2SC4081UBHZG |
50V, 150mA, General purpose small signal amplifier (Corresponds to AEC-Q101) |
ROHM |
| 216 |
2SC4081UBHZGTL |
50V, 150mA, General purpose small signal amplifier (Corresponds to AEC-Q101) |
ROHM |
| 217 |
2SC4081UBTL |
NPN General Purpose Amplification Transistor |
ROHM |
| 218 |
2SC4082 |
Transistors > Small Signal Bipolar Transistors(up to 0.6W) |
ROHM |
| 219 |
2SC4082T106 |
NPN High frequency Transistor |
ROHM |
| 220 |
2SC4083 |
Transistors > Small Signal Bipolar Transistors(up to 0.6W) |
ROHM |
| 221 |
2SC4083T106N |
NPN High frequency Transistor |
ROHM |
| 222 |
2SC4084 |
Epitaxial Planar NPN Silicon Transistors |
ROHM |
| 223 |
2SC4408 |
Transistor Silicon NPN Epitaxial Type (PCT process) Power Amplifier Applications Power Switching Applications |
TOSHIBA |
| 224 |
2SC5408 |
NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION |
NEC |
| 225 |
2SC5408-T1 |
NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION |
NEC |
| 226 |
2SD1408 |
SILICON NPN TRIPLE DIFFUSED TYPE |
TOSHIBA |
| 227 |
2SD408 |
Low Frequency Power Amplifier,Low Speed Switching |
Unknow |
| 228 |
2SF408 |
Silicon-controlled rectifiers 1A |
TOSHIBA |
| 229 |
2SK2408 |
Silicon N-Channel MOS FET |
Hitachi Semiconductor |
| 230 |
2SK2408 |
Transistors>Switching/MOSFETs |
Renesas |
| 231 |
2SK3408 |
MOS field effect transistor |
EIC discrete Semiconductors |
| 232 |
2SK3408 |
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
NEC |
| 233 |
2SK408 |
SILICON N CHANNEL MOS FET |
Hitachi Semiconductor |
| 234 |
2SK4083 |
Silicon N-channel junction FET |
Panasonic |
| 235 |
2SK4083G |
Silicon N-channel junction FET |
Panasonic |
| 236 |
2SK4085LS |
N-Channel Power MOSFET, 500V, 16A, 430mOhm, TO-220F-3FS |
ON Semiconductor |
| 237 |
2SK4088LS |
Power MOSFET 650V 11A 0.85 Ohm Nch Single TO-220F-3FS |
ON Semiconductor |
| 238 |
2SK4089LS |
Power MOSFET 650 V, 12 A, 720 mOhm Single N-Channel TO-220FL(LS) |
ON Semiconductor |
| 239 |
32C408BRPFB20 |
4-megabit (512K x 8-bit) SRAM |
Maxwell Technologies |
| 240 |
32C408BRPFB25 |
4-megabit (512K x 8-bit) SRAM |
Maxwell Technologies |
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