| No. |
Part Name |
Description |
Manufacturer |
| 211 |
BUK545-100B |
PowerMOS transistor Logic level FET |
Philips |
| 212 |
BUK545-200A |
PowerMOS transistor Logic level FET |
Philips |
| 213 |
BUK545-200B |
PowerMOS transistor Logic level FET |
Philips |
| 214 |
BUK545-60A |
PowerMOS transistor Logic level FET |
Philips |
| 215 |
BUK545-60B |
PowerMOS transistor Logic level FET |
Philips |
| 216 |
BUK545-60H |
PowerMOS transistor Logic level FET |
Philips |
| 217 |
BUK7K45-100E |
Dual N-channel 100 V, 37.6 mΩ standard level MOSFET |
Nexperia |
| 218 |
BUK7M45-40E |
N-channel 40 V, 45 mΩ standard level MOSFET in LFPAK33 |
Nexperia |
| 219 |
BUK9245-55A |
N-channel TrenchMOS logic level FET |
Nexperia |
| 220 |
BUK9245-55A |
N-channel TrenchMOS logic level FET |
NXP Semiconductors |
| 221 |
BUK9245-55A |
TrenchMOS(tm) logic level FET |
Philips |
| 222 |
BUK9K45-100E |
Dual N-channel TrenchMOS logic level FET |
Nexperia |
| 223 |
BUK9K45-100E |
Dual N-channel 100 V, 45 mΩ logic level MOSFET |
NXP Semiconductors |
| 224 |
BUL45-D |
NPN Silicon Power Transistor High Voltage SWITCHMODE Series |
ON Semiconductor |
| 225 |
BYV45-600 |
Normal recovery diode. All purpose mean power rectifier diodes, free wheeling diode, non controllable and half controllable rectifiers, UPS etc. Ifav = 45A, Vrrm = 600V. |
USHA India LTD |
| 226 |
BYX45-1000 |
Controlled avalanche diode |
mble |
| 227 |
BYX45-1000R |
Controlled avalanche diode |
mble |
| 228 |
BYX45-1000R |
Silicon avalanche rectifier diode |
Mullard |
| 229 |
BYX45-1000R |
1000V Controlled Avalanche Rectifier Diode, anode to case |
Philips |
| 230 |
BYX45-600 |
Controlled avalanche diode |
mble |
| 231 |
BYX45-600R |
Controlled avalanche diode |
mble |
| 232 |
BYX45-600R |
Silicon avalanche rectifier diode |
Mullard |
| 233 |
BYX45-600R |
600V Controlled Avalanche Rectifier Diode, anode to case |
Philips |
| 234 |
BYX45-800 |
Controlled avalanche diode |
mble |
| 235 |
BYX45-800R |
Controlled avalanche diode |
mble |
| 236 |
BYX45-800R |
Silicon avalanche rectifier diode |
Mullard |
| 237 |
BYX45-800R |
800V Controlled Avalanche Rectifier Diode, anode to case |
Philips |
| 238 |
C67078-S1345-A2 |
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated) |
Siemens |
| 239 |
CCS050M12CM2 |
1.2-kV, 50-A, Silicon Carbide, 45-mm, Six-Pack (Three-Phase) Module |
Wolfspeed |
| 240 |
CDBD2045-G |
Schottky Barrier Rectifiers Diodes, VRRM=45V, VR=45V, IO=20A |
Comchip Technology |
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