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Datasheets for 4500

Datasheets found :: 310
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No. Part Name Description Manufacturer
211 PFC375-4500 PerFormanCe POWER Power-One
212 PM2701 Single supply RFIC attenuator 800 to 4500 MHz operation. PACIFIC Monolithics
213 PSB4500 (PSB4501) Standard Speech Circuit Siemens
214 PT4500 24V-Input Isolated DC-DC Converter Family Texas Instruments
215 QIQ0645001 Low side Chopper IGBT Module 600V 450A IGBT / 600V 450A Fast Diode Powerex Power Semiconductors
216 QIQ0645002 Low side Chopper IGBT Module 600V 450A IGBT / 600V 450A Fast Diode Powerex Power Semiconductors
217 QIQ1245001 Low side Chopper IGBT Module 1200V 450A IGBT / 1200V 750A Fast Diode Powerex Power Semiconductors
218 QPA4486A DC - 4500 MHz Cascadable SiGe HBT MMIC Amplifier Qorvo
219 QPA5263A DC - 4500 MHz Cascadable SiGe HBT Amplifier Qorvo
220 QPA5389A DC - 4500 MHz Cascadable SiGe HBT Amplifier Qorvo
221 QRS1450001 Fast Recovery Diode Module (500 Amps/1400 Volts) Powerex Power Semiconductors
222 SD1700C45K 4500V 1875A Std. Recovery Diode in a DO-200AC (K-Puk)package International Rectifier
223 SD1893 Chip: geometry 4500; polarity NPN Semicoa Semiconductor
224 SD1893F Chip: geometry 4500; polarity NPN Semicoa Semiconductor
225 SD2053C45S50R 4500V Fast Recovery Diode in a B-44 (R-Puk) package International Rectifier
226 SD233N45S50PC 4500V Fast Recovery Diode in a B-8 package International Rectifier
227 SD263C45S50L 4500V Fast Recovery Diode in a DO-200AB (B-Puk) package International Rectifier
228 SD3019F Chip: geometry 4500; polarity PNP Semicoa Semiconductor
229 SD500N45PC 4500V 475A Std. Recovery Diode in a B-8package International Rectifier
230 SD553C45S50L 4500V Fast Recovery Diode in a DO-200AB (B-Puk) package International Rectifier
231 SD700C45L 4500V 700A Std. Recovery Diode in a DO-200AB (B-Puk)package International Rectifier
232 SD800C45L 4500V 1065A Std. Recovery Diode in a DO-200AB (B-Puk)package International Rectifier
233 SD853C45S50K 4500V Fast Recovery Diode in a DO-200AC (K-Puk) package International Rectifier
234 SFH4500 High-Speed Infrared Emitter (950 nm) Infineon
235 SG2500GXH24 V(drm): 4500V; V(rrm): 16V; 2500A; gate turn-off thyristor TOSHIBA
236 SGA-0163 DC-4500 MHz, 2.1V silicon germanium cascadeable gain block Stanford Microdevices
237 SGA-4386 DC-4500 MHz, cascadable SiGe HBT MMIC amplifier. High gain: 14.6 dB at 1950 MHz Stanford Microdevices
238 SGA-4486 DC-4500 MHz, cascadable SiGe HBT MMIC amplifier. High gain: 15.9 dB at 1950 MHz Stanford Microdevices
239 SGA-5263 DC-4500 MHz, silicon germanium cascadeable gain block. High output intercept: 29 dBm typ at 1950 MHz Stanford Microdevices
240 SGA-6289 DC-4500 MHz, cascadable SiGe HBT MMIC amplifier. High gain: 12.6 dB at 1950 MHz Stanford Microdevices


Datasheets found :: 310
Page: | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 |



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