| No. |
Part Name |
Description |
Manufacturer |
| 211 |
2SK3903 |
Power MOSFET (N-ch 500V<VDSS≤700V) |
TOSHIBA |
| 212 |
2SK3907 |
Power MOSFET (N-ch 250V<VDSS≤500V) |
TOSHIBA |
| 213 |
2SK3911 |
Power MOSFET (N-ch 500V<VDSS≤700V) |
TOSHIBA |
| 214 |
2SK3935 |
Power MOSFET (N-ch 250V<VDSS≤500V) |
TOSHIBA |
| 215 |
2SK3947 |
Power MOSFET (N-ch 500V<VDSS≤700V) |
TOSHIBA |
| 216 |
2SK4002 |
Power MOSFET (N-ch 500V<VDSS≤700V) |
TOSHIBA |
| 217 |
2SK4012 |
Power MOSFET (N-ch 250V<VDSS≤500V) |
TOSHIBA |
| 218 |
2SK4085LS |
N-Channel Power MOSFET, 500V, 16A, 430mOhm, TO-220F-3FS |
ON Semiconductor |
| 219 |
2SK4107 |
Power MOSFET (N-ch 250V<VDSS≤500V) |
TOSHIBA |
| 220 |
2SK4124 |
N-Channel Power MOSFET, 500V, 20A, 430mOhm, TO-3P-3L |
ON Semiconductor |
| 221 |
300EXD11 |
Silicon alloy diffused junction rectifier 2500V 300A |
TOSHIBA |
| 222 |
300TD11 |
Silicon alloy diffused junction rectifier 350A 1500V |
TOSHIBA |
| 223 |
301U250 |
2500V 300A Std. Recovery Diode in a DO-205AB (DO-9)package |
International Rectifier |
| 224 |
30HFU-500 |
500V Fast Recovery Diode in a DO-203AB (DO-5) package |
International Rectifier |
| 225 |
30S05 |
Diode Switching 500V 3A 2-Pin Case R |
New Jersey Semiconductor |
| 226 |
30S5 |
Diode Switching 500V 3A 2-Pin Case R |
New Jersey Semiconductor |
| 227 |
320PJT250A |
V(rrm/drm): 2500V; 1400A I(tgq) gate turn-off hockey puk SCR |
International Rectifier |
| 228 |
350PEQ50W |
V(rrm/drm): 500V; 520A RMS Di-vergence gate, hockey puk, inverter SCR |
International Rectifier |
| 229 |
3LF11 |
Silicon alloy-diffused junction avalanche rectifier 3A 500V |
TOSHIBA |
| 230 |
448IRF |
Power MOSFET(Vdss=500V/ Rds(on)=0.60ohm/ Id=11A) |
International Rectifier |
| 231 |
60HFU-500 |
500V Fast Recovery Diode in a DO-203AB (DO-5) package |
International Rectifier |
| 232 |
6DRR5P |
6A 500V FAST RECOVERY DIODE |
IPRS Baneasa |
| 233 |
6SI15 |
6A 1500V SILICON RECTIFIER DIODE |
IPRS Baneasa |
| 234 |
6SI15R |
6A 1500V SILICON RECTIFIER DIODE, REVERSE POLARITY |
IPRS Baneasa |
| 235 |
6SI5 |
6A 500V SILICON RECTIFIER DIODE |
IPRS Baneasa |
| 236 |
6Si5P |
6A 500V RECITIFIER DIODE |
IPRS Baneasa |
| 237 |
6SI5R |
6A 500V SILICON RECTIFIER DIODE, REVERSE POLARITY |
IPRS Baneasa |
| 238 |
800EXD21 |
Silicon alloy-diffused junction rectifier 800A 2500V |
TOSHIBA |
| 239 |
800EXD22 |
Silicon alloy-diffused junction rectifier 800A 2500V |
TOSHIBA |
| 240 |
94-3219 |
500V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package |
International Rectifier |
| | | |
