| No. |
Part Name |
Description |
Manufacturer |
| 211 |
2N5154RSHRG |
Hi-Rel NPN Bipolar Transistor 80V - 5A |
ST Microelectronics |
| 212 |
2N5154RSHRT |
Hi-Rel NPN Bipolar Transistor 80V - 5A |
ST Microelectronics |
| 213 |
2N5154S1 |
Hi-Rel NPN Bipolar Transistor 80V - 5A |
ST Microelectronics |
| 214 |
2N5154SHRG |
Hi-Rel NPN Bipolar Transistor 80V - 5A |
ST Microelectronics |
| 215 |
2N5154SHRT |
Hi-Rel NPN Bipolar Transistor 80V - 5A |
ST Microelectronics |
| 216 |
2N5154U3 |
NPN Transistor |
Microsemi |
| 217 |
2N5155 |
PNP Germanium power transistor, collector-emitter sustaining voltage capability |
Motorola |
| 218 |
2N5155 |
Germanium PNP Transistor |
Motorola |
| 219 |
2N5155 |
Trans GP BJT NPN 500V 3.5A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 220 |
2N5156 |
Germanium PNP Transistor |
Motorola |
| 221 |
2N5157 |
3.5A power, high voltage, NPN silicon transistor 100W |
Motorola |
| 222 |
2N5157 |
Germanium PNP Transistor |
Motorola |
| 223 |
2N5157 |
Trans GP BJT NPN 500V 3.5A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 224 |
2N5157 |
Silicon NPN Power Transistors TO-3 package |
Savantic |
| 225 |
2N5157 |
Silicon NPN Power Transistor, TO-3 (cont d) package |
Silicon Transistor Corporation |
| 226 |
2N5158 |
N-Channel Junction FET (Field-Effect Transistor) |
Motorola |
| 227 |
2N5159 |
N-Channel Junction FET (Field-Effect Transistor) |
Motorola |
| 228 |
2N5339 |
Chip Type 2C5154 Geometry 9201 Polarity NPN |
Semicoa Semiconductor |
| 229 |
2N5515 |
DUAL N CHANNEL JFET LOW NOISE AMPLIFIER |
Intersil |
| 230 |
2N5515 |
N-Channel Junction FET (Field-Effect Transistor) |
Motorola |
| 231 |
2N5515 |
DUAL N-CHANNEL FETS |
New Jersey Semiconductor |
| 232 |
2N6515 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
| 233 |
2N6515 |
0.625W General Purpose NPN Plastic Leaded Transistor. 250V Vceo, 0.500A Ic, 35 - hFE |
Continental Device India Limited |
| 234 |
2N6515 |
NPN Epitaxial Silicon Transistor - High Voltage Transistor |
Fairchild Semiconductor |
| 235 |
2N6515 |
Ic=500mA, Vce=10V transistor |
MCC |
| 236 |
2N6515 |
High Voltage Transistor 625mW |
Micro Commercial Components |
| 237 |
2N6515 |
High Voltage Transistors |
ON Semiconductor |
| 238 |
2N6515 |
High voltage transistor. Collector-emitter voltage: Vceo = 250V. Collector-base voltage: Vcbo = 250V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 239 |
2N6515-D |
High Voltage Transistors |
ON Semiconductor |
| 240 |
2N6515RLRM |
High Voltage Transistors |
ON Semiconductor |
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