| No. |
Part Name |
Description |
Manufacturer |
| 211 |
1N5828 |
Schottky Rectifier |
Microsemi |
| 212 |
1N5828 |
Diode Schottky 40V 15A 2-Pin DO-4 |
New Jersey Semiconductor |
| 213 |
1N5828A |
Diode Schottky 40V 15A 2-Pin DO-4 |
New Jersey Semiconductor |
| 214 |
1N5828R |
High Power Schottky Rectifiers - DO5 Stud Devices |
America Semiconductor |
| 215 |
1N5828R |
SCHOTTKY DIODES STUD TYPE 15 A |
TRANSYS Electronics Limited |
| 216 |
1N5829 |
High Power Schottky Rectifiers - DO4 Stud Devices |
America Semiconductor |
| 217 |
1N5829 |
25A, 20V ultra fast recovery rectifier |
MCC |
| 218 |
1N5829 |
25 Amp Schottky Barrier Rectifier 20 to 35 Volts |
Micro Commercial Components |
| 219 |
1N5829 |
Schottky Rectifier |
Microsemi |
| 220 |
1N5829 |
Diode Schottky 20V 25A 2-Pin DO-4 |
New Jersey Semiconductor |
| 221 |
1N5829 |
Switchmode power rectifier schottky diode. Ideally suited for use as rectifiers in low voltage. High frequency invertors. Free wheeling diodes and polarity protection diodes. Vrrm = 20V. Vrsm = 24V. |
USHA India LTD |
| 222 |
1N5829R |
High Power Schottky Rectifiers - DO4 Stud Devices |
America Semiconductor |
| 223 |
1N582X |
LOW DROP POWER SCHOTTKY RECTIFIER |
SGS Thomson Microelectronics |
| 224 |
1N582X |
LOW DROP POWER SCHOTTKY RECTIFIER |
ST Microelectronics |
| 225 |
1N582XRL |
LOW DROP POWER SCHOTTKY RECTIFIER |
ST Microelectronics |
| 226 |
1S1582 |
Varactor diode |
TOSHIBA |
| 227 |
1S2582 |
Silicon diffused junction rectifier 3A 100V |
TOSHIBA |
| 228 |
2N2582 |
Silicon NPN Transistor |
Motorola |
| 229 |
2N3582 |
Silicon PNP Transistor |
Motorola |
| 230 |
2N5582 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
| 231 |
2N5582 |
NPN Transistor |
Microsemi |
| 232 |
2N5582 |
Trans GP BJT NPN 50V 0.8A 3-Pin TO-46 |
New Jersey Semiconductor |
| 233 |
2N5582 |
Chip Type 2C2222A Geometry 0400 Polarity NPN |
Semicoa Semiconductor |
| 234 |
2N582 |
Germanium PNP Transistor |
Motorola |
| 235 |
2N5820 |
SILICON AF MEDIUM POWER TRANSISTOR |
Micro Electronics |
| 236 |
2N5820 |
Trans GP BJT NPN 60V 0.75A 3-Pin TO-92 |
New Jersey Semiconductor |
| 237 |
2N5821 |
SILICON AF MEDIUM POWER TRANSISTOR |
Micro Electronics |
| 238 |
2N5821 |
Trans GP BJT PNP 60V 0.75A 3-Pin TO-92 |
New Jersey Semiconductor |
| 239 |
2N5822 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
| 240 |
2N5822 |
SILICON AF MEDIUM POWER TRANSISTOR |
Micro Electronics |
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