| No. |
Part Name |
Description |
Manufacturer |
| 211 |
PRN111162701JT |
BUSSED RESISTOR NETWORK |
California Micro Devices Corp |
| 212 |
Q-62702-G66 |
GaAs MMIC (Variable gain amplifier MMIC-Amplifier for mobile communication Typical Gain Control range over 50dB) |
Siemens |
| 213 |
Q627002G0078 |
GaAs MMIC (Tri mode power amplifier for AMPS/ CDMA /TDMA portable cellular phones) |
Siemens |
| 214 |
Q62701-F51 |
PNP GERMANIUM RF TRANSISTOR |
Siemens |
| 215 |
Q62701-F72 |
PNP GERMANIUM RF TRANSISTOR |
Siemens |
| 216 |
Q62701-F88 |
PNP GERMANIUM RHF TRANSISTOR |
Siemens |
| 217 |
Q62701-F92 |
PNP GERMANIUM UHF TRANSISTOR |
Siemens |
| 218 |
Q62702-A0042 |
Silicon Crossover Ring Quad Schottky Diode |
Siemens |
| 219 |
Q62702-A0043 |
Silicon Crossover Ring Quad Schottky Diode (Low barrier diode for double balanced mixers, phase detectors and modulators) |
Siemens |
| 220 |
Q62702-A0062 |
Silicon Schottky Diode (DBS mixer application to 10 GHz Low noise figure Low barrier type) |
Siemens |
| 221 |
Q62702-A0960 |
Silicon Schottky Diode (DBS mixer application to 12 GHz Low noise figure Medium barrier type) |
Siemens |
| 222 |
Q62702-A1004 |
Silicon Schottky Diode (Low barrier diode for mixer and detectors up to GHz frequencies) |
Siemens |
| 223 |
Q62702-A1006 |
Silicon Crossover Ring Quad Schottky Diode (High barrier diode for double balanced mixers, phase detectors and modulators) |
Siemens |
| 224 |
Q62702-A1010 |
Silicon PIN Diode (High voltage current controlled RF resistor for RF attenuator and swirches Freqency range above 1 MHz) |
Siemens |
| 225 |
Q62702-A1017 |
Silicon Dual Schottky Diode (High barrier diode for balanced mixers, phase detectors and modulators) |
Siemens |
| 226 |
Q62702-A1025 |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 227 |
Q62702-A1028 |
Silicon Schottky Diode (Low Barrier diode for detectors up to GHz frequencies) |
Siemens |
| 228 |
Q62702-A1028 |
Silicon Schottky Diode (Low barrier diode for detectors up to GHz frequencies) |
Siemens |
| 229 |
Q62702-A1030 |
Silicon Switching Diode Array (For high speed switching applications Common cathode) |
Siemens |
| 230 |
Q62702-A1031 |
Silicon Switching Diode Array (For high speed switching applications Common anode) |
Siemens |
| 231 |
Q62702-A1036 |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 232 |
Q62702-A1037 |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 233 |
Q62702-A1038 |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 234 |
Q62702-A1039 |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 235 |
Q62702-A1041 |
Silicon PIN Diode (High voltage current controlled RF resistor for RF attenuator and swirches Freqency range above 1 MHz) |
Siemens |
| 236 |
Q62702-A1042 |
Silicon PIN Diode (High voltage current controlled RF resistor for RF attenuator and swirches Freqency range above 1 MHz) |
Siemens |
| 237 |
Q62702-A1043 |
Silicon PIN Diode (High voltage current controlled RF resistor for RF attenuator and swirches Freqency range above 1 MHz) |
Siemens |
| 238 |
Q62702-A1045 |
Silicon PIN Diode |
Siemens |
| 239 |
Q62702-A1046 |
Silicon Schottky Diode (For mixer applications in the VHF/UHF range For high speed switching) |
Siemens |
| 240 |
Q62702-A1047 |
Preliminary data Silicon RF Switching Diode (Low loss, low capacitance PIN-diode Band switch for TV-tuners) |
Siemens |
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