No. |
Part Name |
Description |
Manufacturer |
211 |
M368L6423ETN-AA |
DDR SDRAM Unbuffered Module |
Samsung Electronic |
212 |
M368L6423ETN-B0 |
DDR SDRAM Unbuffered Module |
Samsung Electronic |
213 |
M368L6423ETN-CB3 |
DDR SDRAM Unbuffered Module |
Samsung Electronic |
214 |
M368L6423ETN-CLB3 |
DDR SDRAM Unbuffered Module |
Samsung Electronic |
215 |
M368L6423FTN |
184pin Unbuffered Module based on 256Mb F-die with 64/72-bit Non-ECC / ECC |
Sanken |
216 |
M368L6423FTN-CB3B0 |
184pin Unbuffered Module based on 256Mb F-die with 64/72-bit Non-ECC / ECC |
Sanken |
217 |
M368L6523CUS |
DDR SDRAM Unbuffered Module |
Samsung Electronic |
218 |
M368L6523CUS-CCC |
DDR SDRAM Unbuffered Module |
Samsung Electronic |
219 |
MAX5168L |
32-Channel Sample/Hold Amplifier with a Single Multiplexed Input |
MAXIM - Dallas Semiconductor |
220 |
MAX5168LCCM |
32-Channel Sample/Hold Amplifier with a Single Multiplexed Input |
MAXIM - Dallas Semiconductor |
221 |
MAX6368L |
SOT23, Low-Power µP Supervisory Circuits with Battery Backup and Chip-Enable Gating |
MAXIM - Dallas Semiconductor |
222 |
MAX6368LKA23+ |
SOT23, Low-Power µP Supervisory Circuits with Battery Backup and Chip-Enable Gating |
MAXIM - Dallas Semiconductor |
223 |
MAX6368LKA26+ |
SOT23, Low-Power µP Supervisory Circuits with Battery Backup and Chip-Enable Gating |
MAXIM - Dallas Semiconductor |
224 |
MAX6368LKA26+T |
SOT23, Low-Power µP Supervisory Circuits with Battery Backup and Chip-Enable Gating |
MAXIM - Dallas Semiconductor |
225 |
MAX6368LKA26+TG0N |
SOT23, Low-Power µP Supervisory Circuits with Battery Backup and Chip-Enable Gating |
MAXIM - Dallas Semiconductor |
226 |
MAX6368LKA29+ |
SOT23, Low-Power µP Supervisory Circuits with Battery Backup and Chip-Enable Gating |
MAXIM - Dallas Semiconductor |
227 |
MAX6368LKA29+T |
SOT23, Low-Power µP Supervisory Circuits with Battery Backup and Chip-Enable Gating |
MAXIM - Dallas Semiconductor |
228 |
MAX6368LKA31 |
SOT23, Low-Power µP Supervisory Circuits with Battery Backup and Chip-Enable Gating |
MAXIM - Dallas Semiconductor |
229 |
MAX6368LKA31+ |
SOT23, Low-Power µP Supervisory Circuits with Battery Backup and Chip-Enable Gating |
MAXIM - Dallas Semiconductor |
230 |
MAX6368LKA31+T |
SOT23, Low-Power µP Supervisory Circuits with Battery Backup and Chip-Enable Gating |
MAXIM - Dallas Semiconductor |
231 |
MAX6368LKA44+ |
SOT23, Low-Power µP Supervisory Circuits with Battery Backup and Chip-Enable Gating |
MAXIM - Dallas Semiconductor |
232 |
MAX6368LKA44+T |
SOT23, Low-Power µP Supervisory Circuits with Battery Backup and Chip-Enable Gating |
MAXIM - Dallas Semiconductor |
233 |
MAX6368LKA46+ |
SOT23, Low-Power µP Supervisory Circuits with Battery Backup and Chip-Enable Gating |
MAXIM - Dallas Semiconductor |
234 |
MAX6368LKA46+T |
SOT23, Low-Power µP Supervisory Circuits with Battery Backup and Chip-Enable Gating |
MAXIM - Dallas Semiconductor |
235 |
MC468L |
Type D Flip-Flop, Ceramic package TO-116 |
Motorola |
236 |
MC568L |
Type D Flip-Flop, Ceramic package TO-116 |
Motorola |
237 |
MC668L |
Quad 2-Input NAND Gate (passive pullup), Ceramic Package |
Motorola |
238 |
MC668L |
Quad 2-Input Gate (passive pullup), ceramic package |
Motorola |
239 |
MC68HC11A8 |
MC68HC11A8, MC68HC11A1, MC68HCP11A1, and MC68L11A8 HCMOS Single-Chip Microcontroller |
Motorola |
240 |
MC68L11D0 |
Microcontrollers |
Motorola |
| | | |