| No. |
Part Name |
Description |
Manufacturer |
| 211 |
BAT17-07 |
Schottky Diodes - Silicon RF Schottky diode for mixer applications in the VHF/UHF range |
Infineon |
| 212 |
BAT17-07 |
Silicon Schottky Diode (For mixer applications in the VHF/UHF range For high-speed switching) |
Siemens |
| 213 |
BB867-02V |
Varactordiodes - SAT Tunerdiode |
Infineon |
| 214 |
BBY57-02L |
Diodes for low voltage VCO applications |
Infineon |
| 215 |
BBY57-02V |
Varactordiodes - Silicon high Q hyperabrupt tuning diode in ultra small SC79 package |
Infineon |
| 216 |
BBY57-02W |
Varactordiodes - Silicon high Q hyperabrupt tuning diode |
Infineon |
| 217 |
BBY57-02W |
Silicon Tuning Diode (Excellent linearity High Q hyperabrupt tuning diode Low series inductance High capacitance ratio) |
Siemens |
| 218 |
BBY57-03W |
Silicon High Q Hyperabrupt Tuning Diode |
Infineon |
| 219 |
BBY57-03W |
Silicon Tuning Diode (Excellent linearity High Q hyperabrupt tuning diode Low series inductance) |
Siemens |
| 220 |
BBY57-05W |
Varactordiodes - Silicon high Q hyperabrupt tuning diode |
Infineon |
| 221 |
BC327-016 |
Transistor Silicon Plastic PNP |
ON Semiconductor |
| 222 |
BC327-025 |
Transistor Silicon Plastic PNP |
ON Semiconductor |
| 223 |
BC327-040 |
Transistor Silicon Plastic PNP |
ON Semiconductor |
| 224 |
BC337-016 |
Transistor Silicon Plastic NPN |
ON Semiconductor |
| 225 |
BC337-025 |
Transistor Silicon Plastic NPN |
ON Semiconductor |
| 226 |
BC337-040 |
Transistor Silicon Plastic NPN |
ON Semiconductor |
| 227 |
BD232 |
Trans GP BJT NPN 300V 0.5A 3-Pin(3+Tab) Case 77-04 |
New Jersey Semiconductor |
| 228 |
BM90SPKA6MG7-000091 |
Bluetooth Module |
Microchip |
| 229 |
C4777-01 |
APD module |
Hamamatsu Corporation |
| 230 |
C7247-01 |
DA-TYPE SOCKET ASSEMBLIES |
Hamamatsu Corporation |
| 231 |
CASE 197-01 |
Case Outline Dimensions Motorola POWER databook 1980 |
Motorola |
| 232 |
CASE 77-03 |
Case Outline Dimensions Motorola POWER databook 1980 |
Motorola |
| 233 |
CF007-01 |
2.2 dB, 12 GHz, dual-gate GaAs FET chip |
CELERITEK |
| 234 |
CFY67-06 |
HiRel K-Band GaAs Super Low Noise HEMT |
Infineon |
| 235 |
CFY67-08 |
HiRel K-Band GaAs Super Low Noise HEMT |
Infineon |
| 236 |
CFY67-08P |
HiRel K-Band GaAs Super Low Noise HEMT |
Infineon |
| 237 |
CFY77-08 |
AlGaAs / InGaAs HEMT (Very low noise Very high gain For low noise front end amplifiers up to 20 GHz For DBS down converters) |
Siemens |
| 238 |
CLA4607-000 |
Silicon Limiter Diodes, Packaged and Bondable Chips |
Skyworks Solutions |
| 239 |
CLA4607-085LF |
Surface Mount Limiter Diode |
Skyworks Solutions |
| 240 |
CLX27-00 |
HiRel X-Band GaAs Power-MESFET |
Infineon |
| | | |
