| No. |
Part Name |
Description |
Manufacturer |
| 211 |
MDF7-6S-2.54DSA |
2.54mm Pitch Bottom Entry Type Connector |
Hirose Electric |
| 212 |
MRA1417-6 |
MICroAMP 6W, Broadband 1400-1700MHz, gold metalized |
TRW |
| 213 |
MRA1417-6H |
NPN SILICON RF POWER TRANSISTOR |
Advanced Semiconductor |
| 214 |
MRAL1417-6 |
MICroAMP 1400-1700MHz, full MRA performance at 22 volts Vcc, gold metalization, common base, 6W |
TRW |
| 215 |
OSH07-600 |
Encapsulated silicon diode bridge module, single-phase |
Mullard |
| 216 |
OT127-609 |
A.C. controlled thyristors stacks, single-phase |
Mullard |
| 217 |
OTH57-609 |
A.C. controlled thyristors stacks, single-phase |
Mullard |
| 218 |
PH1617-60 |
1615-1685 MHz,60 Watt, wireless power transistor |
MA-Com |
| 219 |
PH1617-60 |
Wireless Power Transistor 60 Watts, 1615 - 1685 MHz |
Tyco Electronics |
| 220 |
PSMN017-60YS |
N-channel LFPAK 60 V 15.7 mΩ standard level MOSFET |
Nexperia |
| 221 |
PSMN017-60YS |
N-channel LFPAK 60 V 15.7 mΩ standard level MOSFET |
NXP Semiconductors |
| 222 |
PSMN1R7-60BS |
N-channel 60 V 2 mΩ standard level MOSFET in D2PAK |
Nexperia |
| 223 |
PSMN1R7-60BS |
N-channel 60 V 2 mΩ standard level MOSFET in D2PAK |
NXP Semiconductors |
| 224 |
SMI-1607-680 |
SMD POWER INDUCTORS |
Micro Electronics |
| 225 |
SMI-1607-681 |
SMD POWER INDUCTORS |
Micro Electronics |
| 226 |
STH110N10F7-6 |
N-channel 100 V, 4.9 mOhm typ., 110 A, STripFET(TM) VII DeepGATE Power MOSFET in H2PAK-6 package |
ST Microelectronics |
| 227 |
STH240N10F7-6 |
N-channel 100 V, 0.002 Ohm typ., 180 A STripFET F7 Power MOSFET in a H2PAK-6 package |
ST Microelectronics |
| 228 |
STH270N8F7-6 |
N-channel 80 V, 1.7 mOhm typ., 180 A STripFET(TM) VII DeepGATE(TM) Power MOSFET in H2PAK-6 package |
ST Microelectronics |
| 229 |
STH310N10F7-6 |
N-channel 100 V, 1.9 mOhm typ., 180 A STripFET(TM) VII DeepGATE(TM) Power MOSFET in H2PAK-6 package |
ST Microelectronics |
| 230 |
STH315N10F7-6 |
Automotive-grade N-channel 100 V, 2.1 mOhm typ., 180 A STripFET F7 Power MOSFET |
ST Microelectronics |
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