No. |
Part Name |
Description |
Manufacturer |
211 |
AO7403L |
P-Channel Enhancement Mode Field Effect Transistor |
Alpha & Omega Semiconductor |
212 |
AON7403 |
Single P-Channel MOSFETs (8V - 60V) |
Alpha & Omega Semiconductor |
213 |
CX74036 |
IS-136 Receive RF IC for TDMA and AMPS Applications |
Conexant |
214 |
CX74037 |
Transmit RF IC for TDMA or AMPS Applications |
Conexant |
215 |
CX74038 |
2.6 GHz/800 MHz Dual Fractional-N/Integer-N Frequency Synthesizer |
Skyworks Solutions |
216 |
D103D |
4 NAND gates with 2 inputs each, collector open, possibly equivalent SN7403N |
RFT |
217 |
D8740300GTH |
40 - 870 MHz, 30 dB GaAs Power Doubler Hybrid Amplifier |
Qorvo |
218 |
D8740320GT |
40 - 870 MHz, 32 dB GaAs Power Doubler Hybrid Amplifier |
Qorvo |
219 |
D8740320GTH |
40 - 870 MHz, 32 dB GaAs Power Doubler Hybrid Amplifier |
Qorvo |
220 |
DM7403 |
Quad 2-Input NAND Gates with Open-Collector Outputs |
Fairchild Semiconductor |
221 |
DM7403 |
Quad 2-Input NAND Gates with Open-Collector Output |
National Semiconductor |
222 |
DM7403CW |
Quad 2-Input NAND Gates with Open-Collector Output |
Fairchild Semiconductor |
223 |
DM7403N |
Quad 2-Input NAND Gates with Open-Collector Outputs |
Fairchild Semiconductor |
224 |
DM7403N |
Quad 2-Input NAND Gates with Open-Collector Outputs |
National Semiconductor |
225 |
FJH291/7403N |
Quadruple 4-input NAND gate with open collector output transistor |
Mullard |
226 |
GFB7403-DP |
Quadruple two input NAND gates, with open collectors outputs (5.5V) |
SESCOSEM |
227 |
GM71C17403CJ-5 |
CMOS DRAM 4,194,304 words x 4 bit, 5.0V, 50ns |
Hynix Semiconductor |
228 |
GM71C17403CJ-6 |
CMOS DRAM 4,194,304 words x 4 bit, 5.0V, 60ns |
Hynix Semiconductor |
229 |
GM71C17403CJ-7 |
CMOS DRAM 4,194,304 words x 4 bit, 5.0V, 70ns |
Hynix Semiconductor |
230 |
GM71C17403CLJ-5 |
CMOS DRAM 4,194,304 words x 4 bit, 5.0V, 50ns, low power |
Hynix Semiconductor |
231 |
GM71C17403CLJ-6 |
CMOS DRAM 4,194,304 words x 4 bit, 5.0V, 60ns, low power |
Hynix Semiconductor |
232 |
GM71C17403CLJ-7 |
CMOS DRAM 4,194,304 words x 4 bit, 5.0V, 70ns, low power |
Hynix Semiconductor |
233 |
GM71C17403CLT-5 |
CMOS DRAM 4,194,304 words x 4 bit, 5.0V, 50ns, low power |
Hynix Semiconductor |
234 |
GM71C17403CLT-6 |
CMOS DRAM 4,194,304 words x 4 bit, 5.0V, 60ns, low power |
Hynix Semiconductor |
235 |
GM71C17403CLT-7 |
CMOS DRAM 4,194,304 words x 4 bit, 5.0V, 70ns, low power |
Hynix Semiconductor |
236 |
GM71C17403CT-5 |
CMOS DRAM 4,194,304 words x 4 bit, 5.0V, 50ns |
Hynix Semiconductor |
237 |
GM71C17403CT-6 |
CMOS DRAM 4,194,304 words x 4 bit, 5.0V, 60ns |
Hynix Semiconductor |
238 |
GM71C17403CT-7 |
CMOS DRAM 4,194,304 words x 4 bit, 5.0V, 70ns |
Hynix Semiconductor |
239 |
GM71CS17403C |
4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM |
Hynix Semiconductor |
240 |
GM71CS17403C-5 |
4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM |
Hynix Semiconductor |
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