| No. |
Part Name |
Description |
Manufacturer |
| 211 |
MAX2839ASEWO+T |
2.3GHz to 2.7GHz MIMO Wireless Broadband RF Transceiver |
MAXIM - Dallas Semiconductor |
| 212 |
MAX2839ETN+ |
2.3GHz to 2.7GHz MIMO Wireless Broadband RF Transceiver |
MAXIM - Dallas Semiconductor |
| 213 |
MAX2839ETN+D |
2.3GHz to 2.7GHz MIMO Wireless Broadband RF Transceiver |
MAXIM - Dallas Semiconductor |
| 214 |
MAX2839ETN+T |
2.3GHz to 2.7GHz MIMO Wireless Broadband RF Transceiver |
MAXIM - Dallas Semiconductor |
| 215 |
MB510 |
2.7GHz TWO MODULUS PRESCALER |
Fujitsu Microelectronics |
| 216 |
MB510FP |
2.7GHz two modulus prescaler |
Fujitsu Microelectronics |
| 217 |
MGFC36V7177A |
7.1 - 7.7GHz BAND 4W INTERNALLY MATCHED GaAs FET |
Mitsubishi Electric Corporation |
| 218 |
MGFC39V7177A |
7.1-7.7GHz BAND 8W Internally Matched GaAs FET |
Mitsubishi Electric Corporation |
| 219 |
MGFC40V7177 |
7.1 - 7.7GHz BAND 10W INTERNALLY MATCHED GaAs FET |
Mitsubishi Electric Corporation |
| 220 |
MGFC40V7177A |
7.1 - 7.7GHz BAND 10W INTERNALLY MATCHED GaAs FET |
Mitsubishi Electric Corporation |
| 221 |
MGFC40V7177B |
7.1 - 7.7GHz BAND 10W INTERNALLY MATCHED GaAs FET |
Mitsubishi Electric Corporation |
| 222 |
MGFS45V2527 |
2.5-2.7GHz BAND 30W INTERNALLY MATCHD GaAs FET |
Mitsubishi Electric Corporation |
| 223 |
MGFX36V0717 |
10.7-11.7GHz BAND 4W INTERNALLY MATCHED GaAs FET |
Mitsubishi Electric Corporation |
| 224 |
MGFX39V0717 |
10.7-11.7GHz Band 8W Internally MATCHD GaAs FET |
Mitsubishi Electric Corporation |
| 225 |
MRAL2327-1.3 |
Microwave Power Transistor 2.3-2.7GHz |
Motorola |
| 226 |
MRAL2327-6 |
Microwave Power Transistor 2.3-2.7GHz |
Motorola |
| 227 |
NB7HQ14M |
2.5V 7GHz / 10Gbps Differential Input to 1.8V / 2.5V 1:4 CML Clock / Data Fanout Buffer w/ Selectable Input Equalizer |
ON Semiconductor |
| 228 |
NB7L14 |
2.5V/3.3V 7GHz/10Gbps Differential 1:4 LVPECL Fanout Buffer |
ON Semiconductor |
| 229 |
NB7L585R |
2.5V/3.3V, 7GHz/10Gbps Differential 2:1 Mux Input to 1:6 RSECL Clock/Data Fanout Buffer / Translator |
ON Semiconductor |
| 230 |
NX6307GH |
1310 nm InGaAsP MQW DFB laser diode for 2.5 Gb/s application. |
NEC |
| 231 |
OP-27GH |
Low Noise, High Speed Precision Operational Amplifiers�� |
Linear Technology |
| 232 |
OP-37GH |
Low Noise, High Speed Precision Operational Amplifiers�� |
Linear Technology |
| 233 |
PTB20080 |
25 Watts, 1.6-1.7GHz RF Power Transistor |
Ericsson Microelectronics |
| 234 |
S1253 |
Silicon NPN epitaxial planar transistor fT=7GHz |
TOSHIBA |
| 235 |
S1254 |
Silicon NPN epitaxial planar transistor fT=7GHz |
TOSHIBA |
| 236 |
SD1866 |
1.4-1.7GHz 25W 24V NPN RF transistor for microwave applications |
SGS Thomson Microelectronics |
| 237 |
SD1869 |
1.4-1.7GHz 12W 24V NPN silicon transistor designed for microwave applications |
SGS Thomson Microelectronics |
| 238 |
SD1875 |
2.3-2.7GHz 15W 24V NPN silicon transistor designed for microwave telecommunication applications |
SGS Thomson Microelectronics |
| 239 |
SP5654 |
2.7GHz 3-Wire Bus Controlled Synthesizer |
Zarlink Semiconductor |
| 240 |
SP5655 |
0.3-7.0V; 2-7GHz bidirectional I2C BUS controlled synthesiser. For satellite TV, high IF cable tuning systems |
Mitel Semiconductor |
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