No. |
Part Name |
Description |
Manufacturer |
211 |
GS881E36BT-250 |
250MHz 5.5ns 256K x 36 9Mb sync burst SRAM |
GSI Technology |
212 |
GS881E36BT-250I |
250MHz 5.5ns 256K x 36 9Mb sync burst SRAM |
GSI Technology |
213 |
GS881E36T-100 |
100MHz 12ns 256K x 36 8Mb sync burst SRAM |
GSI Technology |
214 |
GS881E36T-100I |
100MHz 12ns 256K x 36 8Mb sync burst SRAM |
GSI Technology |
215 |
GS881E36T-11 |
100MHz 11ns 256K x 36 8Mb sync burst SRAM |
GSI Technology |
216 |
GS881E36T-11.5 |
100MHz 11.5ns 256K x 36 8Mb sync burst SRAM |
GSI Technology |
217 |
GS881E36T-11.5I |
100MHz 11.5ns 256K x 36 8Mb sync burst SRAM |
GSI Technology |
218 |
GS881E36T-11I |
100MHz 11ns 256K x 36 8Mb sync burst SRAM |
GSI Technology |
219 |
GS881E36T-66 |
66MHz 18ns 256K x 36 8Mb sync burst SRAM |
GSI Technology |
220 |
GS881E36T-66I |
66MHz 18ns 256K x 36 8Mb sync burst SRAM |
GSI Technology |
221 |
GS881E36T-80 |
80MHz 14ns 256K x 36 8Mb sync burst SRAM |
GSI Technology |
222 |
GS881E36T-80I |
80MHz 14ns 256K x 36 8Mb sync burst SRAM |
GSI Technology |
223 |
HSMP-381E |
HSMP-381E · Low distortion PIN attenuator diode |
Agilent (Hewlett-Packard) |
224 |
HSMP-381E |
HSMP-381E · Low distortion PIN attenuator diode |
Agilent (Hewlett-Packard) |
225 |
HSMS-281E |
HSMS-281E · low 1/f noise general purpose Schottky diode |
Agilent (Hewlett-Packard) |
226 |
HSMS-281E |
HSMS-281E · low 1/f noise general purpose Schottky diode |
Agilent (Hewlett-Packard) |
227 |
HY62CT08081E |
32Kx8bit CMOS SRAM |
Hynix Semiconductor |
228 |
HY62CT08081E-C |
32Kx8bit CMOS SRAM |
Hynix Semiconductor |
229 |
HY62CT08081E-DGC |
32Kx8bit CMOS SRAM |
Hynix Semiconductor |
230 |
HY62CT08081E-DGE |
32Kx8bit CMOS SRAM |
Hynix Semiconductor |
231 |
HY62CT08081E-DGI |
32Kx8bit CMOS SRAM |
Hynix Semiconductor |
232 |
HY62CT08081E-DPC |
32Kx8bit CMOS SRAM |
Hynix Semiconductor |
233 |
HY62CT08081E-DPE |
32Kx8bit CMOS SRAM |
Hynix Semiconductor |
234 |
HY62CT08081E-DPI |
32Kx8bit CMOS SRAM |
Hynix Semiconductor |
235 |
HY62CT08081E-DTC |
32Kx8bit CMOS SRAM |
Hynix Semiconductor |
236 |
HY62CT08081E-DTE |
32Kx8bit CMOS SRAM |
Hynix Semiconductor |
237 |
HY62CT08081E-DTI |
32Kx8bit CMOS SRAM |
Hynix Semiconductor |
238 |
HY62CT08081E-E |
32Kx8bit CMOS SRAM |
Hynix Semiconductor |
239 |
HY62CT08081E-I |
32Kx8bit CMOS SRAM |
Hynix Semiconductor |
240 |
HY62KT08081E |
Low Power Slow SRAM - 256Kb |
Hynix Semiconductor |
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