| No. |
Part Name |
Description |
Manufacturer |
| 211 |
COPCH882C |
COP880C Microcontroller |
National Semiconductor |
| 212 |
CSB772 |
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 400 hFE. Complementary CSD882 |
Continental Device India Limited |
| 213 |
CSB772E |
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 200 - 400 hFE. Complementary CSD882E |
Continental Device India Limited |
| 214 |
CSB772P |
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 160 - 320 hFE. Complementary CSD882P |
Continental Device India Limited |
| 215 |
CSB772Q |
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 100 - 200 hFE. Complementary CSD882Q |
Continental Device India Limited |
| 216 |
CSB772R |
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 120 hFE. Complementary CSD882R |
Continental Device India Limited |
| 217 |
CSD882 |
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 400 hFE. Complementary CSB772 |
Continental Device India Limited |
| 218 |
CSD882E |
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 200 - 400 hFE. Complementary CSB772E |
Continental Device India Limited |
| 219 |
CSD882P |
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 160 - 320 hFE. Complementary CSB772P |
Continental Device India Limited |
| 220 |
CSD882Q |
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 100 - 200 hFE. Complementary CSB772Q |
Continental Device India Limited |
| 221 |
CSD882R |
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 120 hFE. Complementary CSB772R |
Continental Device India Limited |
| 222 |
CXP88216 |
CMOS 8-bit Single Chip Microcomputer |
SONY |
| 223 |
CXP88220 |
CMOS 8-bit Single Chip Microcomputer |
SONY |
| 224 |
CXP88224 |
CMOS 8-bit Single Chip Microcomputer |
SONY |
| 225 |
D2525P882 |
Wavelength-selected isolated DFB laser module with PMF. ITU frequency 188.2. Wavelength 1592.95. Tolerance +-0.4nm. |
Agere Systems |
| 226 |
D2526G882 |
D2570, D2526, D2555 Wavelength-Selected Direct Modulated Isolated DFB Laser Module |
Agere Systems |
| 227 |
D2547P882 |
Wavelength-Selected High-Power D2587P-Type (with Wavelength Locker)/D2547P-Type Isolated DFB Laser Modules |
Agere Systems |
| 228 |
D2570H882 |
D2570, D2526, D2555 Wavelength-Selected Direct Modulated Isolated DFB Laser Module |
Agere Systems |
| 229 |
D2587P882 |
Wavelength-Selected High-Power D2587P-Type (with Wavelength Locker)/D2547P-Type Isolated DFB Laser Modules |
Agere Systems |
| 230 |
D2587P8825 |
Wavelength-Selected High-Power D2587P-Type (with Wavelength Locker)/D2547P-Type Isolated DFB Laser Modules |
Agere Systems |
| 231 |
D882SS |
NPN EPITAXIAL SILICON TRANSISTOR |
Unisonic Technologies |
| 232 |
DAC8820 |
16-Bit, Parallel Input Multiplying DAC |
Texas Instruments |
| 233 |
DAC8820IBDB |
16-Bit, Parallel Input Multiplying DAC 28-SSOP -40 to 85 |
Texas Instruments |
| 234 |
DAC8820IBDBR |
16-Bit, Parallel Input Multiplying DAC 28-SSOP -40 to 85 |
Texas Instruments |
| 235 |
DAC8820ICDB |
16-Bit, Parallel Input Multiplying DAC 28-SSOP -40 to 85 |
Texas Instruments |
| 236 |
DAC8820ICDBG4 |
16-Bit, Parallel Input Multiplying DAC 28-SSOP -40 to 85 |
Texas Instruments |
| 237 |
DAC8820ICDBR |
16-Bit, Parallel Input Multiplying DAC 28-SSOP -40 to 85 |
Texas Instruments |
| 238 |
DAC8822 |
16-bit Dual parallel interface High Accuracy Multiplying DAC |
Texas Instruments |
| 239 |
DAC8822QBDBT |
16-bit Dual parallel interface High Accuracy Multiplying DAC 38-TSSOP -40 to 125 |
Texas Instruments |
| 240 |
DAC8822QBDBTR |
16-bit Dual parallel interface High Accuracy Multiplying DAC 38-TSSOP -40 to 125 |
Texas Instruments |
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