| No. |
Part Name |
Description |
Manufacturer |
| 211 |
GS72116AJ-12 |
128K x 16 2Mb Asynchronous SRAM |
GSI Technology |
| 212 |
GS72116AJ-12I |
128K x 16 2Mb Asynchronous SRAM |
GSI Technology |
| 213 |
GS74104AJ-10 |
10ns 1M x 4 4Mb asynchronous SRAM |
GSI Technology |
| 214 |
GS74104AJ-10I |
10ns 1M x 4 4Mb asynchronous SRAM |
GSI Technology |
| 215 |
GS74104AJ-12 |
12ns 1M x 4 4Mb asynchronous SRAM |
GSI Technology |
| 216 |
GS74104AJ-12I |
12ns 1M x 4 4Mb asynchronous SRAM |
GSI Technology |
| 217 |
GS74108AJ-10 |
10ns 512K x 8 4Mb asynchronous SRAM |
GSI Technology |
| 218 |
GS74108AJ-10I |
10ns 512K x 8 4Mb asynchronous SRAM |
GSI Technology |
| 219 |
GS74108AJ-12 |
12ns 512K x 8 4Mb asynchronous SRAM |
GSI Technology |
| 220 |
GS74108AJ-12I |
12ns 512K x 8 4Mb asynchronous SRAM |
GSI Technology |
| 221 |
GS74116AJ-10 |
256K x 16 4Mb Asynchronous SRAM |
GSI Technology |
| 222 |
GS74116AJ-10I |
256K x 16 4Mb Asynchronous SRAM |
GSI Technology |
| 223 |
GS74116AJ-10IT |
256K x 16 4Mb Asynchronous SRAM |
GSI Technology |
| 224 |
GS74116AJ-10T |
256K x 16 4Mb Asynchronous SRAM |
GSI Technology |
| 225 |
GS74116AJ-12 |
256K x 16 4Mb Asynchronous SRAM |
GSI Technology |
| 226 |
GS74116AJ-12I |
256K x 16 4Mb Asynchronous SRAM |
GSI Technology |
| 227 |
GS74116AJ-12IT |
256K x 16 4Mb Asynchronous SRAM |
GSI Technology |
| 228 |
GS74116AJ-12T |
256K x 16 4Mb Asynchronous SRAM |
GSI Technology |
| 229 |
HM514260AJ-10 |
100ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 230 |
HM51S4260AJ-10 |
100ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 231 |
IP120MAJ-12 |
0.5 AMP NEGATIVE VOLTAGE REGULATOR |
SemeLAB |
| 232 |
IP120MAJ-15 |
0.5 AMP NEGATIVE VOLTAGE REGULATOR |
SemeLAB |
| 233 |
KM41256AJ-10 |
256K x 1-bit DRAM, 100ns |
Samsung Electronic |
| 234 |
KM41256AJ-12 |
256K x 1-bit DRAM, 120ns |
Samsung Electronic |
| 235 |
KM41256AJ-15 |
256K x 1-bit DRAM, 150ns |
Samsung Electronic |
| 236 |
KM41464AJ-12 |
64K X 4 BIT DYNAMIC RAM WITH PAGE MODE |
Samsung Electronic |
| 237 |
KM41464AJ-15 |
64K X 4 BIT DYNAMIC RAM WITH PAGE MODE |
Samsung Electronic |
| 238 |
KM681002AJ-12 |
128Kx8 High Speed Static RAM5V Operating, Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range. |
Samsung Electronic |
| 239 |
LM101AJ-14/8839 |
Operational Amplifiers |
National Semiconductor |
| 240 |
LM741AJ-14/883 |
Operational Amplifier |
National Semiconductor |
| | | |
