No. |
Part Name |
Description |
Manufacturer |
211 |
GM71C18163AJ-6 |
1,048,576 words x 16 bit DRAM, 60ns |
LG Semiconductor |
212 |
HM514400AJ-6 |
1,048,576-word x 4-bid DRAM, 60ns |
Hitachi Semiconductor |
213 |
HY534256AJ-60 |
256K x 4-bit CMOS DRAM, 60ns |
Hynix Semiconductor |
214 |
HYB3164400AJ-60 |
16M x 4-Bit Dynamic RAM |
Siemens |
215 |
HYB3164405AJ-60 |
16M x 4 Bit 8k EDO DRAM |
Infineon |
216 |
HYB3164405AJ-60 |
16M x 4-Bit Dynamic RAM |
Siemens |
217 |
HYB3164800AJ-60 |
8M x 8-Bit Dynamic RAM |
Siemens |
218 |
HYB3164805AJ-60 |
8M x 8 Bit 8k EDO DRAM |
Infineon |
219 |
HYB3164805AJ-60 |
8M x 8-Bit Dynamic RAM |
Siemens |
220 |
HYB3165400AJ-60 |
16M x 4-Bit Dynamic RAM |
Siemens |
221 |
HYB3165405AJ-60 |
16M x 4 Bit 4k EDO DRAM |
Infineon |
222 |
HYB3165405AJ-60 |
16M x 4-Bit Dynamic RAM |
Siemens |
223 |
HYB3165800AJ-60 |
8M x 8-Bit Dynamic RAM |
Siemens |
224 |
HYB3165805AJ-60 |
8M x 8 Bit 4k EDO DRAM |
Infineon |
225 |
HYB3165805AJ-60 |
8M x 8-Bit Dynamic RAM |
Siemens |
226 |
KM416V1004AJ-6 |
3.3V, 1M x 16 bit CMOS DRAM with extended data out, 60ns |
Samsung Electronic |
227 |
NN5118160AJ-60 |
CMOS 1M x 16BIT DYNAMIC RAM |
etc |
228 |
TC511402AJ-60 |
1,048,576 x 4 BIT DYNAMIC RAM |
TOSHIBA |
229 |
TC514100AJ-60 |
60 ns, 1-bit generation dynamic RAM |
TOSHIBA |
230 |
TC514101AJ-60 |
4,194,304 WORD x 1 BIT DYNAMIC RAM |
TOSHIBA |
231 |
TC514102AJ-60 |
60 ns, 1-bit generation dynamic RAM |
TOSHIBA |
232 |
TC514400AJ-60 |
60 ns, 4-bit generation dynamic RAM |
TOSHIBA |
233 |
TC514402AJ-60 |
60 ns, 4-bit generation dynamic RAM |
TOSHIBA |
234 |
TC514410AJ-60 |
60 ns, 4-bit generation dynamic RAM |
TOSHIBA |
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