No. |
Part Name |
Description |
Manufacturer |
211 |
2N697 |
NPN silicon annular transistor designed for small-signal amplifier |
Motorola |
212 |
2SA1980 |
PNP Silicon Transistor (General small signal amplifier) |
AUK Corp |
213 |
2SA1980E |
PNP Silicon Transistor (General small signal amplifier) |
AUK Corp |
214 |
2SA1980EF |
PNP Silicon Transistor (General small signal amplifier) |
AUK Corp |
215 |
2SA1980M |
PNP Silicon Transistor (General small signal amplifier) |
AUK Corp |
216 |
2SA1980S |
PNP Silicon Transistor (General small signal amplifier) |
AUK Corp |
217 |
2SA1980SF |
PNP Silicon Transistor (General small signal amplifier) |
AUK Corp |
218 |
2SA1980U |
PNP Silicon Transistor (General small signal amplifier) |
AUK Corp |
219 |
2SA1980UF |
PNP Silicon Transistor (General small signal amplifier) |
AUK Corp |
220 |
2SA2154CT |
Transistor for low frequency small-signal amplification |
TOSHIBA |
221 |
2SA2154MFV |
Transistor for low frequency small-signal amplification |
TOSHIBA |
222 |
2SA2195 |
Transistor for low frequency small-signal amplification |
TOSHIBA |
223 |
2SA2214 |
Transistor for low frequency small-signal amplification |
TOSHIBA |
224 |
2SA2215 |
Transistor for low frequency small-signal amplification |
TOSHIBA |
225 |
2SA495 |
Silicon PNP epitaxial planar transistor for General Amplifier Applications fT=200MHz, complementary to 2SC372 |
TOSHIBA |
226 |
2SB459 |
Germanium PNP Alloyed Junction Transistor, intended for use in Audio Frequency Small Signal Amplifier |
Hitachi Semiconductor |
227 |
2SB460 |
Germanium PNP Alloyed Junction Transistor, intended for use in Audio Frequency Small Signal Amplifier |
Hitachi Semiconductor |
228 |
2SB66H |
Germanium Transistor PNP Alloyed Junction, intended for use in Audio Frequency Small Signal Amplifier |
Hitachi Semiconductor |
229 |
2SB75 |
Germanium PNP Alloyed Junction Transistor, intended for use in Audio Frequency Small Signal Amplifier |
Hitachi Semiconductor |
230 |
2SB759 |
Si PNP epitaxial planar. General amplifier. |
Panasonic |
231 |
2SB759A |
Si PNP epitaxial planar. General amplifier. |
Panasonic |
232 |
2SB75A |
Germanium PNP Alloyed Junction Transistor, intended for use in Audio Frequency Small Signal Amplifier |
Hitachi Semiconductor |
233 |
2SB75AH |
Germanium PNP Alloyed Junction Transistor, intended for use in Low Speed Switching, Audio Frequency Small Signal Amplifier |
Hitachi Semiconductor |
234 |
2SB75H |
Germanium PNP Alloyed Junction Transistor, intended for use in Low Speed Switching, Audio Frequency Small Signal Amplifier |
Hitachi Semiconductor |
235 |
2SB902 |
Si PNP epitaxial planar. General amplifier. |
Panasonic |
236 |
2SC1927 |
NPN SILICON EPITAXIAL DUAL TRANSISTOR FOR DIFFERENTIAL AMPLIFIER AND ULTRA HIGH SPEED SWITCHING INDUSTRIAL USE |
NEC |
237 |
2SC2230 |
Transistor Silicon NPN Triple Diffused Type (PCT Process) HIGH VOLTAGE GENERAL AMPLIFIER AND COLOR TV CLASS B SOUND OUTPUT APPLICATIONS |
TOSHIBA |
238 |
2SC2230A |
Transistor Silicon NPN Triple Diffused Type (PCT Process) HIGH VOLTAGE GENERAL AMPLIFIER AND COLOR TV CLASS B SOUND OUTPUT APPLICATIONS |
TOSHIBA |
239 |
2SC2258A |
Si NPN triple diffused planar. High voltage general amplifier. |
Panasonic |
240 |
2SC2258B |
Si NPN triple diffused planar. High voltage general amplifier. |
Panasonic |
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