| No. |
Part Name |
Description |
Manufacturer |
| 211 |
2N696 |
NPN silicon annular transistor designed for small-signal amplifier |
Motorola |
| 212 |
2N696S |
NPN silicon annular transistor designed for small-signal amplifier and general purpose switching applications |
Motorola |
| 213 |
2N697 |
NPN silicon annular transistor designed for small-signal amplifier |
Motorola |
| 214 |
2N697S |
NPN silicon annular transistor designed for small-signal amplifier and general purpose switching applications |
Motorola |
| 215 |
2SA1980 |
PNP Silicon Transistor (General small signal amplifier) |
AUK Corp |
| 216 |
2SA1980E |
PNP Silicon Transistor (General small signal amplifier) |
AUK Corp |
| 217 |
2SA1980EF |
PNP Silicon Transistor (General small signal amplifier) |
AUK Corp |
| 218 |
2SA1980M |
PNP Silicon Transistor (General small signal amplifier) |
AUK Corp |
| 219 |
2SA1980S |
PNP Silicon Transistor (General small signal amplifier) |
AUK Corp |
| 220 |
2SA1980SF |
PNP Silicon Transistor (General small signal amplifier) |
AUK Corp |
| 221 |
2SA1980U |
PNP Silicon Transistor (General small signal amplifier) |
AUK Corp |
| 222 |
2SA1980UF |
PNP Silicon Transistor (General small signal amplifier) |
AUK Corp |
| 223 |
2SA495 |
Silicon PNP epitaxial planar transistor for General Amplifier Applications fT=200MHz, complementary to 2SC372 |
TOSHIBA |
| 224 |
2SB459 |
Germanium PNP Alloyed Junction Transistor, intended for use in Audio Frequency Small Signal Amplifier |
Hitachi Semiconductor |
| 225 |
2SB460 |
Germanium PNP Alloyed Junction Transistor, intended for use in Audio Frequency Small Signal Amplifier |
Hitachi Semiconductor |
| 226 |
2SB66H |
Germanium Transistor PNP Alloyed Junction, intended for use in Audio Frequency Small Signal Amplifier |
Hitachi Semiconductor |
| 227 |
2SB75 |
Germanium PNP Alloyed Junction Transistor, intended for use in Audio Frequency Small Signal Amplifier |
Hitachi Semiconductor |
| 228 |
2SB759 |
Si PNP epitaxial planar. General amplifier. |
Panasonic |
| 229 |
2SB759A |
Si PNP epitaxial planar. General amplifier. |
Panasonic |
| 230 |
2SB75A |
Germanium PNP Alloyed Junction Transistor, intended for use in Audio Frequency Small Signal Amplifier |
Hitachi Semiconductor |
| 231 |
2SB75AH |
Germanium PNP Alloyed Junction Transistor, intended for use in Low Speed Switching, Audio Frequency Small Signal Amplifier |
Hitachi Semiconductor |
| 232 |
2SB75H |
Germanium PNP Alloyed Junction Transistor, intended for use in Low Speed Switching, Audio Frequency Small Signal Amplifier |
Hitachi Semiconductor |
| 233 |
2SB902 |
Si PNP epitaxial planar. General amplifier. |
Panasonic |
| 234 |
2SC1927 |
NPN SILICON EPITAXIAL DUAL TRANSISTOR FOR DIFFERENTIAL AMPLIFIER AND ULTRA HIGH SPEED SWITCHING INDUSTRIAL USE |
NEC |
| 235 |
2SC2230 |
Transistor Silicon NPN Triple Diffused Type (PCT Process) HIGH VOLTAGE GENERAL AMPLIFIER AND COLOR TV CLASS B SOUND OUTPUT APPLICATIONS |
TOSHIBA |
| 236 |
2SC2230A |
Transistor Silicon NPN Triple Diffused Type (PCT Process) HIGH VOLTAGE GENERAL AMPLIFIER AND COLOR TV CLASS B SOUND OUTPUT APPLICATIONS |
TOSHIBA |
| 237 |
2SC2258A |
Si NPN triple diffused planar. High voltage general amplifier. |
Panasonic |
| 238 |
2SC2258B |
Si NPN triple diffused planar. High voltage general amplifier. |
Panasonic |
| 239 |
2SC281 |
Silicon NPN Epitaxial LTP Transistor Vcbo=30V, Pc=200mW, intended for use in Audio Frequency Small Signal Amplifier, 27 Transceiver Power Output |
Hitachi Semiconductor |
| 240 |
2SC281H |
Silicon NPN Epitaxial LTP Transistor, intended for use in Audio Frequency Small Signal Amplifier |
Hitachi Semiconductor |
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