No. |
Part Name |
Description |
Manufacturer |
211 |
1N974A |
36.0V Standard Grade 400 mW Axial Zener Diode |
Continental Device India Limited |
212 |
1N974B |
36.0V Standard Grade 400 mW Axial Zener Diode |
Continental Device India Limited |
213 |
1N975 |
39.0V Standard Grade 400 mW Axial Zener Diode |
Continental Device India Limited |
214 |
1N975A |
39.0V Standard Grade 400 mW Axial Zener Diode |
Continental Device India Limited |
215 |
1N975B |
39.0V Standard Grade 400 mW Axial Zener Diode |
Continental Device India Limited |
216 |
1N976 |
43.0V Standard Grade 400 mW Axial Zener Diode |
Continental Device India Limited |
217 |
1N976A |
43.0V Standard Grade 400 mW Axial Zener Diode |
Continental Device India Limited |
218 |
1N976B |
43.0V Standard Grade 400 mW Axial Zener Diode |
Continental Device India Limited |
219 |
1N977 |
47.0V Standard Grade 400 mW Axial Zener Diode |
Continental Device India Limited |
220 |
1N977A |
47.0V Standard Grade 400 mW Axial Zener Diode |
Continental Device India Limited |
221 |
1N977B |
47.0V Standard Grade 400 mW Axial Zener Diode |
Continental Device India Limited |
222 |
1S1920 |
Silicon Diffused Junction Diode used for TV Horizontal Deflection Damper |
Hitachi Semiconductor |
223 |
1S689 |
Germanium Alloyed Junction Diode, VR(peak) -200V, intended for use in TV Horizontal Deflection Dampar |
Hitachi Semiconductor |
224 |
1S689A |
Germanium Alloyed Junction Diode, VR(peak) -270V, intended for use in TV Horizontal Deflection Dampar |
Hitachi Semiconductor |
225 |
1S77 |
Germanium Gold Bond for TV Horizontal Deflection Oscillator stage damper |
Hitachi Semiconductor |
226 |
1S80 |
Germanium Point Contact Diode, intended for use as a General Detector |
Hitachi Semiconductor |
227 |
2N1613 |
0.800W General Purpose NPN Metal Can Transistor. 50V Vceo, 0.500A Ic, 20 hFE. |
Continental Device India Limited |
228 |
2N1711 |
0.800W General Purpose NPN Metal Can Transistor. 50V Vceo, 1.000A Ic, 40 hFE. |
Continental Device India Limited |
229 |
2N1893 |
0.800W General Purpose NPN Metal Can Transistor. 80V Vceo, 0.500A Ic, 20 hFE. |
Continental Device India Limited |
230 |
2N2102 |
1.000W RF NPN Metal Can Transistor. 65V Vceo, 1.000A Ic, 40 - 120 hFE. |
Continental Device India Limited |
231 |
2N2218 |
0.800W General Purpose NPN Metal Can Transistor. 30V Vceo, 0.800A Ic, 20 hFE. |
Continental Device India Limited |
232 |
2N2218A |
0.800W General Purpose NPN Metal Can Transistor. 40V Vceo, 0.800A Ic, 20 hFE. |
Continental Device India Limited |
233 |
2N2219 |
0.800W General Purpose NPN Metal Can Transistor. 30V Vceo, 0.800A Ic, 35 hFE. |
Continental Device India Limited |
234 |
2N2219A |
0.800W General Purpose NPN Metal Can Transistor. 40V Vceo, 0.800A Ic, 35 hFE. |
Continental Device India Limited |
235 |
2N2221 |
0.500W General Purpose NPN Metal Can Transistor. 30V Vceo, 0.800A Ic, 20 hFE. |
Continental Device India Limited |
236 |
2N2221A |
0.500W General Purpose NPN Metal Can Transistor. 40V Vceo, 0.800A Ic, 25 hFE. |
Continental Device India Limited |
237 |
2N2222 |
0.500W General Purpose NPN Metal Can Transistor. 30V Vceo, 0.800A Ic, 30 hFE. |
Continental Device India Limited |
238 |
2N2222A |
0.500W General Purpose NPN Metal Can Transistor. 40V Vceo, 0.800A Ic, 40 hFE. |
Continental Device India Limited |
239 |
2N2270 |
1.000W General Purpose NPN Metal Can Transistor. 45V Vceo, 1.000A Ic, 50 - 200 hFE. |
Continental Device India Limited |
240 |
2N2369 |
1.200W General Purpose NPN Metal Can Transistor. 15V Vceo, A Ic, 40 - 120 hFE. |
Continental Device India Limited |
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