No. |
Part Name |
Description |
Manufacturer |
211 |
2N5322 |
General purpose P-N-P silicon power transistor. |
General Electric Solid State |
212 |
2N5323 |
General purpose P-N-P silicon power transistor. |
General Electric Solid State |
213 |
2N5365 |
SILICON TRANSISTORS |
General Electric Solid State |
214 |
2N5366 |
Planar epitaxial passivated PNP silicon transistor. 40V, 300mA. |
General Electric Solid State |
215 |
2N5415 |
High-voltage silicon P-N-P planar transistor. |
General Electric Solid State |
216 |
2N5416 |
High-voltage silicon P-N-P planar transistor. |
General Electric Solid State |
217 |
2N5441 |
40-A Silicon Triacs |
General Electric Solid State |
218 |
2N5442 |
40-A Silicon Triacs |
General Electric Solid State |
219 |
2N5443 |
40-A Silicon Triacs |
General Electric Solid State |
220 |
2N5444 |
40-A Silicon Triacs |
General Electric Solid State |
221 |
2N5445 |
40-A Silicon Triacs |
General Electric Solid State |
222 |
2N5446 |
40-A Silicon Triacs |
General Electric Solid State |
223 |
2N5490 |
Silicon N-P-N VERSAWATT transistor. 60V, 50W. |
General Electric Solid State |
224 |
2N5491 |
Silicon N-P-N VERSAWATT transistor. 60V, 50W. |
General Electric Solid State |
225 |
2N5492 |
Silicon N-P-N VERSAWATT transistor. 75V, 50W. |
General Electric Solid State |
226 |
2N5493 |
Silicon N-P-N VERSAWATT transistor. 75V, 50W. |
General Electric Solid State |
227 |
2N5494 |
Silicon N-P-N VERSAWATT transistor. 60V, 50W. |
General Electric Solid State |
228 |
2N5495 |
Silicon N-P-N VERSAWATT transistor. 60V, 50W. |
General Electric Solid State |
229 |
2N5496 |
Silicon N-P-N VERSAWATT transistor. 90V, 50W. |
General Electric Solid State |
230 |
2N5497 |
Silicon N-P-N VERSAWATT transistor. 90V, 50W. |
General Electric Solid State |
231 |
2N5629 |
Silicon N-P-N epitaxial-base high-power transistor. 100V, 200W. |
General Electric Solid State |
232 |
2N5630 |
Silicon N-P-N epitaxial-base high-power transistor. 120V, 200W. |
General Electric Solid State |
233 |
2N5631 |
Silicon N-P-N epitaxial-base high-power transistor. 140V, 200W. |
General Electric Solid State |
234 |
2N5671 |
High-current, high-power, high-speed silicon N-P-N planar transistor. |
General Electric Solid State |
235 |
2N5672 |
High-current, high-power, high-speed silicon N-P-N planar transistor. |
General Electric Solid State |
236 |
2N5754 |
2.5-A silicon triac. Voltage(typ) 100 V. |
General Electric Solid State |
237 |
2N5755 |
2.5-A silicon triac. Voltage(typ) 200 V. |
General Electric Solid State |
238 |
2N5756 |
2.5-A silicon triac. Voltage(typ) 400 V. |
General Electric Solid State |
239 |
2N5757 |
2.5-A silicon triac. Voltage(typ) 600 V. |
General Electric Solid State |
240 |
2N5781 |
Silicon P-N-P epitaxial-base transistor. -80V, 10W. |
General Electric Solid State |
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