No. |
Part Name |
Description |
Manufacturer |
211 |
ISPGAL22V10B-7LJ |
In-System Programmable E2CMOS PLD |
Lattice Semiconductor |
212 |
ISPGAL22V10C-10LJ |
In-System Programmable E2CMOS PLD |
Lattice Semiconductor |
213 |
ISPGAL22V10C-10LK |
In-System Programmable E2CMOS PLD |
Lattice Semiconductor |
214 |
ISPGAL22V10C-15LJ |
In-System Programmable E2CMOS PLD |
Lattice Semiconductor |
215 |
ISPGAL22V10C-15LJI |
In-System Programmable E2CMOS PLD |
Lattice Semiconductor |
216 |
ISPGAL22V10C-15LK |
In-System Programmable E2CMOS PLD |
Lattice Semiconductor |
217 |
ISPGAL22V10C-15LKI |
In-System Programmable E2CMOS PLD |
Lattice Semiconductor |
218 |
ISPGAL22V10C-7LJ |
In-System Programmable E2CMOS PLD |
Lattice Semiconductor |
219 |
MG100H1AL2 |
Silicon NPN triple diffused darlington power module |
TOSHIBA |
220 |
MG200H1AL2 |
(DISCRETE/OPTO) |
TOSHIBA |
221 |
MRAL2023 |
MICroAMP 22V operation, broadband 2000-2300MHz, gold metalized |
TRW |
222 |
MRAL2023-1.5 |
Microwave Power Transistor |
Motorola |
223 |
MRAL2023-1.5 |
MICroAMP 22V operation, broadband 2000-2300MHz, gold metalized |
TRW |
224 |
MRAL2023-1.5H |
Microwave Power Transistor |
Motorola |
225 |
MRAL2023-1.5H |
MICroAMP, 22V operation, Broadband 2000-2300MHz, diffused ballast resistors, gold metalized, 1.5W |
TRW |
226 |
MRAL2023-12 |
Microwave Power Transistor |
Motorola |
227 |
MRAL2023-12 |
MICroAMP 22V operation, broadband 2000-2300MHz, gold metalized |
TRW |
228 |
MRAL2023-12H |
Microwave Power Transistor |
Motorola |
229 |
MRAL2023-12H |
MICroAMP, 22V operation, Broadband 2000-2300MHz, diffused ballast resistors, gold metalized, 12W |
TRW |
230 |
MRAL2023-18 |
18W Braodband Microwave Power Transistor |
Motorola |
231 |
MRAL2023-18H |
Microwave Power Transistor |
Motorola |
232 |
MRAL2023-3 |
Microwave Power Transistor |
Motorola |
233 |
MRAL2023-3 |
MICroAMP 22V operation, broadband 2000-2300MHz, gold metalized |
TRW |
234 |
MRAL2023-3H |
Microwave Power Transistor |
Motorola |
235 |
MRAL2023-3H |
MICroAMP, 22V operation, Broadband 2000-2300MHz, diffused ballast resistors, gold metalized, 3W |
TRW |
236 |
MRAL2023-6 |
NPN SILICON RF POWER TRANSISTOR |
Advanced Semiconductor |
237 |
MRAL2023-6 |
Microwave Power Transistor |
Motorola |
238 |
MRAL2023-6 |
MICroAMP 22V operation, broadband 2000-2300MHz, gold metalized |
TRW |
239 |
MRAL2023-6H |
Microwave Power Transistor |
Motorola |
240 |
MRAL2023-6H |
MICroAMP, 22V operation, Broadband 2000-2300MHz, diffused ballast resistors, gold metalized, 6W |
TRW |
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