| No. |
Part Name |
Description |
Manufacturer |
| 211 |
GN01058B |
Gallium Arsenide Devices |
Panasonic |
| 212 |
GN01059B |
Gallium Arsenide Devices |
Panasonic |
| 213 |
GN01061B |
Gallium Arsenide Devices |
Panasonic |
| 214 |
GN01063B |
Gallium Arsenide Devices |
Panasonic |
| 215 |
GN01064B |
Gallium Arsenide Devices |
Panasonic |
| 216 |
GN01067B |
Gallium Arsenide Devices |
Panasonic |
| 217 |
GN01068B |
Gallium Arsenide Devices |
Panasonic |
| 218 |
GN01071B |
Gallium Arsenide Devices |
Panasonic |
| 219 |
GN02011 |
Gallium Arsenide Devices |
Panasonic |
| 220 |
GN02012 |
Gallium Arsenide Devices |
Panasonic |
| 221 |
GN02018B |
Gallium Arsenide Devices |
Panasonic |
| 222 |
GN02019B |
Gallium Arsenide Devices |
Panasonic |
| 223 |
GN02022B |
Gallium Arsenide Devices |
Panasonic |
| 224 |
GN02023B |
Gallium Arsenide Devices |
Panasonic |
| 225 |
GN02024B |
Gallium Arsenide Devices |
Panasonic |
| 226 |
GN04005 |
Gallium Arsenide Devices |
Panasonic |
| 227 |
GN04006N |
Gallium Arsenide Devices |
Panasonic |
| 228 |
GN04054N |
Gallium Arsenide Devices |
Panasonic |
| 229 |
GN04073N |
Gallium Arsenide Devices |
Panasonic |
| 230 |
GN05008N |
Gallium Arsenide Devices |
Panasonic |
| 231 |
GN05009N |
Gallium Arsenide Devices |
Panasonic |
| 232 |
GN05013N |
Gallium Arsenide Devices |
Panasonic |
| 233 |
H24B1 |
THE H24B SERIES CONSISTS OF A GALLIUM ARSENIDE INFRARED EMITTING DIODE COUPLED WITH A SILICON PHOTOTRANSISTOR |
QT Optoelectronics |
| 234 |
H24B2 |
THE H24B SERIES CONSISTS OF A GALLIUM ARSENIDE INFRARED EMITTING DIODE COUPLED WITH A SILICON PHOTOTRANSISTOR |
QT Optoelectronics |
| 235 |
HLMP-EG32-QT000 |
HLMP-EG32-QT000 · These Precision Optical Performance AlInGaP (aluminum indium gallium phosphide) LEDs provide superi |
Agilent (Hewlett-Packard) |
| 236 |
HLMP-EL18-UXRDD |
HLMP-EL18-UXRDD · Precision Optical Performance AlInGaP II (aluminum indium gallium phosphide) LEDs offer superior lig |
Agilent (Hewlett-Packard) |
| 237 |
HLMP-EL27-QTRDD |
HLMP-EL27-QTRDD · Precision Optical Performance AlInGaP II (aluminum indium gallium phosphide) LEDs offer superior lig |
Agilent (Hewlett-Packard) |
| 238 |
ITR8102 |
gallium arsenide infrared emitting diode |
Everlight Electronics |
| 239 |
K101 |
Photocoupler(These Photocouplers consist of a Gallium Arsenide Infrared Emitting) |
Kodenshi Corp |
| 240 |
K101 |
Photocoupler(These Photocouplers consist of a Gallium Arsenide Infrared Emitting) |
Kondenshi Corp |
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