No. |
Part Name |
Description |
Manufacturer |
211 |
BS62LV4008TIP70 |
Very Low Power/Voltage CMOS SRAM 512K X 8 bit |
Brilliance Semiconductor |
212 |
BS62UV4000 |
Ultra Low Power/Voltage CMOS SRAM 512K X 8 bit |
Brilliance Semiconductor |
213 |
BS62UV4000EC |
Ultra Low Power/Voltage CMOS SRAM 512K X 8 bit |
Brilliance Semiconductor |
214 |
BS62UV4000EI |
Ultra Low Power/Voltage CMOS SRAM 512K X 8 bit |
Brilliance Semiconductor |
215 |
BS62UV4000PC |
Ultra Low Power/Voltage CMOS SRAM 512K X 8 bit |
Brilliance Semiconductor |
216 |
BS62UV4000PI |
Ultra Low Power/Voltage CMOS SRAM 512K X 8 bit |
Brilliance Semiconductor |
217 |
BS62UV4000SC |
Ultra Low Power/Voltage CMOS SRAM 512K X 8 bit |
Brilliance Semiconductor |
218 |
BS62UV4000SI |
Ultra Low Power/Voltage CMOS SRAM 512K X 8 bit |
Brilliance Semiconductor |
219 |
BS62UV4000STC |
Ultra Low Power/Voltage CMOS SRAM 512K X 8 bit |
Brilliance Semiconductor |
220 |
BS62UV4000STI |
Ultra Low Power/Voltage CMOS SRAM 512K X 8 bit |
Brilliance Semiconductor |
221 |
BS62UV4000TC |
Ultra Low Power/Voltage CMOS SRAM 512K X 8 bit |
Brilliance Semiconductor |
222 |
BS62UV4000TI |
Ultra Low Power/Voltage CMOS SRAM 512K X 8 bit |
Brilliance Semiconductor |
223 |
HYB5116400BT-50 |
4M x 4 Bit FPM DRAM 5 V 4k 50ns |
Infineon |
224 |
HYB5116400BT-60 |
4M x 4 Bit FPM DRAM 5 V 4k 60ns |
Infineon |
225 |
HYB514100BJ-50 |
4M x 1 Bit FPM DRAM 5 V 50 ns |
Infineon |
226 |
HYB514100BJ-60 |
4M x 1 Bit FPM DRAM 5 V 60 ns |
Infineon |
227 |
HYB514171BJ-50 |
256k x 16 Bit FPM DRAM 5 V 50 ns |
Infineon |
228 |
HYB514171BJ-60 |
256k x 16 Bit FPM DRAM 5 V 60 ns |
Infineon |
229 |
HYB514175BJ-50 |
256k x 16 Bit EDO DRAM 5 V 50 ns |
Infineon |
230 |
HYB514175BJ-55 |
256k x 16 Bit EDO DRAM 5 V 55 ns |
Infineon |
231 |
HYB514175BJ-60 |
256k x 16 Bit EDO DRAM 5 V 60 ns |
Infineon |
232 |
HYB514400BJ-50 |
1M x 4 Bit FPM DRAM 5 V 50 ns |
Infineon |
233 |
HYB514400BJ-60 |
1M x 4 Bit FPM DRAM 5 V 60 ns |
Infineon |
234 |
HYB514405BJ-50 |
1M x 4 Bit EDO DRAM 5 V 50 ns |
Infineon |
235 |
HYB514405BJ-60 |
1M x 4 Bit EDO DRAM 5 V 60 ns |
Infineon |
236 |
HYB514405BJ-70 |
1M x 4 Bit EDO DRAM 5 V 70 ns |
Infineon |
237 |
K4R881869 |
288Mbit RDRAM 512K x 18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
238 |
K4R881869M-NBCCG6 |
288Mbit RDRAM 512K x 18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
239 |
K4R881869M-NCK7 |
288Mbit RDRAM 512K x 18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
240 |
K4R881869M-NCK8 |
288Mbit RDRAM 512K x 18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
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