| No. |
Part Name |
Description |
Manufacturer |
| 211 |
BD244C |
PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 100Vdc, Vcb = 100Vdc, Veb = 5Vdc Ic = 6Adc, PD = 65W. |
USHA India LTD |
| 212 |
BDX77 |
Medium Power Switching and Amplifier Applications |
Continental Device India Limited |
| 213 |
BF771 |
RF-Bipolar - For modulators and amplifiers in TV and VCR tuners |
Infineon |
| 214 |
BF771 |
NPN Silicon RF Transistor (For modulators and amplifiers in TV and VCR tuners) |
Siemens |
| 215 |
BF771W |
RF-Bipolar - For modulators and amplifiers in TV and VCR tuners |
Infineon |
| 216 |
BF771W |
NPN Silicon RF Transistor (For modulators and amplifiers in TV and VCR tuners) |
Siemens |
| 217 |
BF799 |
RF-Bipolar - For linear broadband amplifier application up to 500 MHz and as SAW filter driver in TV tuners |
Infineon |
| 218 |
BF799 |
NPN SILICON RF TRANSISTOR (For linear broadband amplifier applications up to 500 MHz SAW filter driver in TV tuners) |
Siemens |
| 219 |
BF799W |
RF-Bipolar - For linear broadband amplifier application up to 500 MHz and as SAW filter driver in TV tuners |
Infineon |
| 220 |
BF799W |
NPN Silicon RF Transistor (For linear broadband amplifier applications up to 500MHz SAW filter driver in TV tuners) |
Siemens |
| 221 |
BF921S |
Epitaxial planar NPN transistor, intended for use as preamplifier for surface wave TV IF filters and VHF-UHF wide band amplifier |
SGS-ATES |
| 222 |
BFG135A |
RF-Bipolar - For low-distortion broadband amplifier stages up to 2GHz, Power amplifiers in DECT and PCN systems |
Infineon |
| 223 |
BFG19 |
NPN Silicon RF Transistor (For low noise/ low distortion broadband amplifiers in antenna) |
Siemens |
| 224 |
BFG193 |
RF-Bipolar - For low noise, high-gain amplifiers up to 2 GHz and linear broadband amplifiers |
Infineon |
| 225 |
BFG193 |
NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers) |
Siemens |
| 226 |
BFG194 |
PNP Silicon RF Transistor (For low distortion broadband amplifiers in antenna and telecommunications) |
Siemens |
| 227 |
BFG196 |
RF-Bipolar - For low noise, low distortion broadband amplifiers in wireless systems up to 1.5 GHz |
Infineon |
| 228 |
BFG196 |
NPN Silicon RF Transistor (For low noise, low distortion broadband amplifiers in antenna and telecommunications) |
Siemens |
| 229 |
BFG19S |
RF-Bipolar - For low noise, low distortion broadband amplifiers in wireless systems up to 1.5 GHz |
Infineon |
| 230 |
BFG19S |
NPN Silicon RF Transistor (For low noise, low distortion broadband amplifiers in antenna) |
Siemens |
| 231 |
BFP181 |
RF-Bipolar - For low-noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA |
Infineon |
| 232 |
BFP181 |
NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA) |
Siemens |
| 233 |
BFP181R |
RF-Bipolar - For low-noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA |
Infineon |
| 234 |
BFP181R |
NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA) |
Siemens |
| 235 |
BFP181W |
NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA) |
Siemens |
| 236 |
BFP182 |
RF-Bipolar - For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA |
Infineon |
| 237 |
BFP182 |
NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA) |
Siemens |
| 238 |
BFP182R |
RF-Bipolar - For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA |
Infineon |
| 239 |
BFP182R |
NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA) |
Siemens |
| 240 |
BFP182W |
RF-Bipolar - For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA |
Infineon |
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