| No. |
Part Name |
Description |
Manufacturer |
| 211 |
2N6072A |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 300 V. |
Motorola |
| 212 |
2N6072A |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 300 V. |
Motorola |
| 213 |
2N6072B |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 300 V. |
Motorola |
| 214 |
2N6072B |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 300 V. |
Motorola |
| 215 |
2N6073 |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 400 V. |
Motorola |
| 216 |
2N6073 |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 400 V. |
Motorola |
| 217 |
2N6073A |
Sensitive Gate Triacs |
ON Semiconductor |
| 218 |
2N6073A |
Sensitive Gate Triacs |
ON Semiconductor |
| 219 |
2N6073B |
Sensitive Gate Triacs |
ON Semiconductor |
| 220 |
2N6074 |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 500 V. |
Motorola |
| 221 |
2N6074 |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 500 V. |
Motorola |
| 222 |
2N6074A |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 500 V. |
Motorola |
| 223 |
2N6074A |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 500 V. |
Motorola |
| 224 |
2N6074B |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 500 V. |
Motorola |
| 225 |
2N6074B |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 500 V. |
Motorola |
| 226 |
2N6075 |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 600 V. |
Motorola |
| 227 |
2N6075 |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 600 V. |
Motorola |
| 228 |
2N6075A |
Sensitive Gate Triacs |
ON Semiconductor |
| 229 |
2N6075B |
Sensitive Gate Triacs |
ON Semiconductor |
| 230 |
2N6107 |
TO-220 Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
| 231 |
2N6188 |
100 V, 10 A high speed PNP transistor |
Solid State Devices Inc |
| 232 |
2N6189 |
100 V, 10 A high speed PNP transistor |
Solid State Devices Inc |
| 233 |
2N6192 |
100 V, 5 A high speed PNP transistor |
Solid State Devices Inc |
| 234 |
2N6193 |
100 V, 5 A high speed PNP transistor |
Solid State Devices Inc |
| 235 |
2N6322 |
200 V, 30 A NPN high voltage/high energy |
Solid State Devices Inc |
| 236 |
2N6324 |
200 V, 30 A NPN high voltage/high energy |
Solid State Devices Inc |
| 237 |
2N6388 |
TO-220 Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
| 238 |
2N7002K |
N-channel TrenchMOS intermediate level FET |
Nexperia |
| 239 |
2N7002K |
N-channel TrenchMOS intermediate level FET |
NXP Semiconductors |
| 240 |
2N7014 |
MOSPOWER N-Channel Enhancement Mode Transistor low gate threshold 100V 3.5A |
Siliconix |
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