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Datasheets for ATURE DE

Datasheets found :: 236
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No. Part Name Description Manufacturer
211 U2794B 1000-MHz quadrature demodulator for cellular phones and hybrid fibre coax Atmel
212 U2794B 1000 MHz Quadrature Demodulator TEMIC
213 U2794B-AFS 1000 MHz Quadrature Demodulator TEMIC
214 U2794B-AFSG3 1000 MHz Quadrature Demodulator TEMIC
215 U2794B-MFS 1000 MHZ QUADRATURE DEMODULATOR Atmel
216 U2794B-MFSG3 1000 MHZ QUADRATURE DEMODULATOR Atmel
217 uPC1167C2 µPC1167C2 FM IF system with quadrature detector silicon bipolar monolithic integrated circuit NEC
218 uPC1200V µPC1200V Super low noise FM-IF amplifier with quadrature detector silicon monolithic bipolar integrated circuit NEC
219 uPC1222C µPC1222C AM tuner, FM IF system with quadrature detector NEC
220 uPC1222C(R) µPC1222C(R) AM tuner, FM IF system with quadrature detector NEC
221 W4NRD0X-0000 Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
222 W4NRD8C-U000 Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
223 W4NXD8C-0000 Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
224 W4NXD8C-L000 Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
225 W4NXD8C-S000 Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
226 W4NXD8D-0000 Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
227 W4NXD8D-S000 Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
228 W4NXD8G-0000 Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
229 W6NRD0X-0000 Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
230 W6NRE0X-0000 Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
231 W6NXD0K-0000 Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
232 W6NXD0KLSR-0000 Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
233 W6NXD3J-0000 Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
234 W6NXD3K-0000 Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
235 W6NXD3L-0000 Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
236 W6PXD3O-0000 Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER


Datasheets found :: 236
Page: | 4 | 5 | 6 | 7 | 8 |



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