| No. |
Part Name |
Description |
Manufacturer |
| 211 |
HN4B01JE |
Transistor for low frequency small-signal amplification 2 in 1 |
TOSHIBA |
| 212 |
HRB0103A |
Silicon Schottky Barrier Diode |
Hitachi Semiconductor |
| 213 |
HRB0103A |
Diodes>Switching |
Renesas |
| 214 |
HRB0103B |
Silicon Schottky Barrier Diode |
Hitachi Semiconductor |
| 215 |
HRB0103B |
Diodes>Switching |
Renesas |
| 216 |
HSB0104YP |
Schottky Barrier Diodes for Detection and Mixer |
Hitachi Semiconductor |
| 217 |
HSB0104YP |
Diodes>Switching |
Renesas |
| 218 |
ICE2B0165 |
Off-Line SMPS Current Mode Controller with integrated 650V/ 800V CoolMOS |
Infineon |
| 219 |
IGB01N120H2 |
1200V HighSpeed2 and 600V HighSpeed IGBT for switching frequency from 30kHz upwards. Focus applications: Lamp ballast, power supplies ... |
Infineon |
| 220 |
IGB01N120H2E3045A |
IGBTs & DuoPacks - 1A 1200V HighSpeed2 IGBT D2Pak |
Infineon |
| 221 |
IKB01N120H2 |
1200V HighSpeed2 IGBT and 600V HighSpeed IGBT with antiparallel fast recovery EmCon™ diode in only one package. |
Infineon |
| 222 |
IKB01N120H2E3045A |
IGBTs & DuoPacks - 1A 1200V HighSpeed2 DuoPack IGBT D2Pak |
Infineon |
| 223 |
KAB01D100M |
Multi-Chip Package MEMORY |
Samsung Electronic |
| 224 |
KAB01D100M-TLGP |
Multi-Chip Package MEMORY |
Samsung Electronic |
| 225 |
KAB01D100M-TNGP |
Multi-Chip Package MEMORY |
Samsung Electronic |
| 226 |
KHB1890B01 |
DECT |
Korea Electronics (KEC) |
| 227 |
KHB2403B01 |
US-C/P |
Korea Electronics (KEC) |
| 228 |
KHB2475B01 |
US-C/P |
Korea Electronics (KEC) |
| 229 |
KMB010P30QA |
P-Ch Trench MOSFET |
Korea Electronics (KEC) |
| 230 |
KMB012N30QA |
N-Ch Trench MOSFET |
Korea Electronics (KEC) |
| 231 |
KMB014P30QA |
P-Channel Trench MOSFET |
Korea Electronics (KEC) |
| 232 |
L9613B013TR |
DATA INTERFACE |
ST Microelectronics |
| 233 |
LBN150B01 |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 30V to 50V |
Diodes |
| 234 |
LBN150B01-7 |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 30V to 50V |
Diodes |
| 235 |
LFB01 |
Silicon Planar Leadless Type Ultrahigh-Speed Switching Diode |
SANYO |
| 236 |
LFB01L |
Very High-Speed Switching Diode |
SANYO |
| 237 |
LMN200B01 |
200 mA LOAD SWITCH PRE-BIASED PNP TRANSISTOR AND N-MOSFET WITH PULL DOWN RESISTOR |
Diodes |
| 238 |
LMN400B01 |
400mA LOAD SWITCH PNP TRANSISTOR AND N-MOSFET WITH GATE PULL-DOWN RESISTOR |
Diodes |
| 239 |
LXHL-BB01 |
Luxeon Emitter |
etc |
| 240 |
LXHL-DB01 |
Luxeon Emitter |
etc |
| | | |
