| No. |
Part Name |
Description |
Manufacturer |
| 211 |
RB068MM-40TF |
Schottky Barrier Diode (Corresponds to AEC-Q101) |
ROHM |
| 212 |
RB068MM-40TFTR |
Schottky Barrier Diode (Corresponds to AEC-Q101) |
ROHM |
| 213 |
RB068MM-40TR |
Schottky Barrier Diode |
ROHM |
| 214 |
RB068MM-60 |
Schottky Barrier Diode |
ROHM |
| 215 |
RB068MM-60TF |
Schottky Barrier Diode (Corresponds to AEC-Q101) |
ROHM |
| 216 |
RB068MM-60TFTR |
Schottky Barrier Diode (Corresponds to AEC-Q101) |
ROHM |
| 217 |
RB068MM-60TR |
Schottky Barrier Diode |
ROHM |
| 218 |
RCA1B06 |
NPN Pi-Nu silicon power transistor |
RCA Solid State |
| 219 |
SAB0600 |
THREEE TONE CHIME SINGLE TONE CHIME DUAL TONE CHIME |
Siemens |
| 220 |
SAB0601 |
THREEE TONE CHIME SINGLE TONE CHIME DUAL TONE CHIME |
Siemens |
| 221 |
SAB0602 |
THREEE TONE CHIME SINGLE TONE CHIME DUAL TONE CHIME |
Siemens |
| 222 |
SB060 |
60 V, 1 A, Schottky barrier rectifier |
GOOD-ARK Electronics |
| 223 |
SB060 |
Schottky Barrier Rectifier, Forward Current 1.0A |
Vishay |
| 224 |
SDB06S60 |
600V Silicon Carbide Ultrafast Schottky Diode |
Infineon |
| 225 |
SDB06S60SMD |
Silicon Carbide Schottky Diodes - 6A diode in TO263 package |
Infineon |
| 226 |
SGB06N60 |
IGBTs & DuoPacks - 6A 600V TO263AB SMD IGBT |
Infineon |
| 227 |
SKB06N60 |
IGBTs & DuoPacks - 6A 600V TO263AB SMD IGBT+Diode |
Infineon |
| 228 |
SKB06N60HS |
IGBTs & DuoPacks - 6A 600V TO263 IGBT+Diode |
Infineon |
| 229 |
STUB062 |
SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR |
EIC discrete Semiconductors |
| 230 |
STUB068 |
Working peak reverse voltage: 58.1 V, 1 mA, 400 W surface mount transient voltage suppressor |
EIC discrete Semiconductors |
| 231 |
STUB06I |
SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR |
EIC discrete Semiconductors |
| 232 |
T10B065 |
Glass passivated junction |
Littelfuse |
| 233 |
T10B065B |
T10B series Sibod, glass passivated junction, bi-directional device for telephone and line card protection. Irm = 2uA @ Vrm = 55V,max. Ir = 50uA @ Vr = 65V,max, Bulk (500pcs). |
Littelfuse |
| 234 |
T10B065T |
T10B series Sibod, glass passivated junction, bi-directional device for telephone and line card protection. Irm = 2uA @ Vrm = 55V,max. Ir = 50uA @ Vr = 65V,max, Tape and reeled (1500pcs). |
Littelfuse |
| 235 |
TB0640H |
Thyristor Surge Protection Devices (TSPDs) |
Diodes |
| 236 |
TB0640H-13 |
100A BI-DIRECTIONAL SURFACE MOUNT THYRISTOR SURGE PROTECTIVE DEVICE |
Diodes |
| 237 |
TB0640H-13-F |
50A BIDIRECTIONAL SURFACE MOUNT THYRISTOR SURGE PROTECTION DEVICE |
Diodes |
| 238 |
TB0640L |
Thyristor Surge Protection Devices (TSPDs) |
Diodes |
| 239 |
TB0640L-13 |
30A BI-DIRECTIONAL SURFACE MOUNT THYRISTOR SURGE PROTECTIVE DEVICE |
Diodes |
| 240 |
TB0640L-13-F |
30A BIDIRECTIONAL SURFACE MOUNT THYRISTOR SURGE PROTECTIVE DEVICE |
Diodes |
| | | |
