No. |
Part Name |
Description |
Manufacturer |
211 |
HB54R5128KN-A75B |
512M; 133MHz DDR SDRAM SO-DIMM |
Elpida Memory |
212 |
HB54R5128KN-B75B |
512M; 133MHz DDR SDRAM SO-DIMM |
Elpida Memory |
213 |
KSB546 |
PNP Epitaxial Silicon Transistor |
Fairchild Semiconductor |
214 |
KSB546 |
PNP (TV VERTICAL DEFLECTION OUTPUT) |
Samsung Electronic |
215 |
KSB546O |
PNP Epitaxial Silicon Transistor |
Fairchild Semiconductor |
216 |
KSB546Y |
PNP Epitaxial Silicon Transistor |
Fairchild Semiconductor |
217 |
KSB546YTU |
PNP Epitaxial Silicon Transistor |
Fairchild Semiconductor |
218 |
LB5410 |
BLUE T1 (5mm) LED LAMP |
Siemens |
219 |
LB5436 |
BLUE LINE (TM) Hyper 5 mm (T1 3/4) LE... |
Infineon |
220 |
LSFB54-190-004M0 |
W-CDMA-IF |
American KSS |
221 |
LSFB54-380-004M0 |
W-CDMA-IF |
American KSS |
222 |
M55302L-B54H |
M55302 |
etc |
223 |
M55302L-B54L |
M55302 |
etc |
224 |
M55302L-B54M |
M55302 |
etc |
225 |
M55302L-B54S |
M55302 |
etc |
226 |
M55355L-B54H |
M55302 |
etc |
227 |
M55355L-B54L |
M55302 |
etc |
228 |
M55355L-B54M |
M55302 |
etc |
229 |
M55355L-B54S |
M55302 |
etc |
230 |
MB54501 |
FRONT-END LSI |
Fujitsu Microelectronics |
231 |
MB54501PFV |
Front-end LSI |
Fujitsu Microelectronics |
232 |
MB54502 |
LOW NOISE AMPLIFIER (2 CIRCUITS) |
Fujitsu Microelectronics |
233 |
MB54502PFV |
Low noise amplifier (2 circuits) |
Fujitsu Microelectronics |
234 |
MB54503 |
HIGH-POWER AMPLIFIER |
Fujitsu Microelectronics |
235 |
MB54503PFV |
High-power amplifier |
Fujitsu Microelectronics |
236 |
MB54608B |
1.0 GHz band Low Power I/Q Modulator For Direct Conversion |
Fujitsu Microelectronics |
237 |
MB54608L |
1.0 GHz band Low Power I/Q Modulator For Direct Conversion |
Fujitsu Microelectronics |
238 |
MB54608LPFV |
1.0 GHz band Low Power I/Q Modulator For Direct Conversion |
Fujitsu Microelectronics |
239 |
MB54608LPV1 |
1.0 GHz band Low Power I/Q Modulator For Direct Conversion |
Fujitsu Microelectronics |
240 |
MB54609 |
Quadrature Modulator IC (With 1.0 GHz Up-converter) |
Fujitsu Microelectronics |
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