No. |
Part Name |
Description |
Manufacturer |
211 |
OR2T06A-3BA100 |
Field-Programmable Gate Arrays |
etc |
212 |
OR2T06A-3BA100I |
Field-Programmable Gate Arrays |
etc |
213 |
OR2T06A-4BA100 |
Field-Programmable Gate Arrays |
etc |
214 |
OR2T06A-4BA100I |
Field-Programmable Gate Arrays |
etc |
215 |
OR2T06A-5BA100 |
Field-Programmable Gate Arrays |
etc |
216 |
OR2T06A-5BA100I |
Field-Programmable Gate Arrays |
etc |
217 |
OR2T06A-6BA100 |
Field-Programmable Gate Arrays |
etc |
218 |
OR2T06A-6BA100I |
Field-Programmable Gate Arrays |
etc |
219 |
OR2T06A-7BA100 |
Field-Programmable Gate Arrays |
etc |
220 |
OR2T06A-7BA100I |
Field-Programmable Gate Arrays |
etc |
221 |
S1RBA10 |
Silicon rectifier diode - bridge type |
Shindengen |
222 |
SBA100-04J |
Schottky Barrier Diode (Twin Type � Cathode Common) 40V, 10A Rectifier |
SANYO |
223 |
SBA100-04Y |
Schottky Barrier Diode (Twin Type � Cathode Common) 40V, 10A Rectifier |
SANYO |
224 |
SBA100-09J |
Schottky Barrier Diode (Twin Type � Cathode Common) 90V, 10A Rectifier |
SANYO |
225 |
SBA100-09Y |
Schottky Barrier Diode (Twin Type � Cathode Common) 90V, 10A Rectifier |
SANYO |
226 |
TE28F320B3BA100 |
3 Volt Advanced Boot Block Flash Memory |
Intel |
227 |
TMS320C6211GBA100 |
DIGITAL SIGNAL PROCESSOR |
Texas Instruments |
228 |
TMS320C6711GBA100 |
DIGITAL SIGNAL PROCESSOR |
Texas Instruments |
| | | |