| No. |
Part Name |
Description |
Manufacturer |
| 211 |
BD137 |
Plastic Medium Power Silicon NPN Transistor |
Motorola |
| 212 |
BD137 |
Silicon n-p-n medium power transistor |
Mullard |
| 213 |
BD137 |
NPN Medium Power Transistor |
National Semiconductor |
| 214 |
BD137 |
Power 1.5A 60V NPN |
ON Semiconductor |
| 215 |
BD137 |
NPN power transistors |
Philips |
| 216 |
BD137 |
Silicon NPN Power Transistors TO-126 package |
Savantic |
| 217 |
BD137 |
NPN silicon power transistor AF amplification and general purpose |
SESCOSEM |
| 218 |
BD137 |
Power NPN Epitaxial transistor - Fast switching |
SESCOSEM |
| 219 |
BD137 |
hfe min 40 Transistor polarity NPN Current Ic continuous max 1 A Voltage Vceo 60 V Current Ic (hfe) 0.15 A Power Ptot 12.5 W Temperature power 25 ?C Transistors number of 1 |
SGS Thomson Microelectronics |
| 220 |
BD137 |
Transistor NPN |
Siemens |
| 221 |
BD137 |
NPN Silicon Transistor for AF driver and power stages of medium output |
Siemens |
| 222 |
BD137 |
NPN SILICON TRANSISTORS |
Siemens |
| 223 |
BD137 |
Silicon NPN epitaxial medium power transistor |
TOSHIBA |
| 224 |
BD137 |
Epitaxial silicon NPN planar power transistor |
TUNGSRAM |
| 225 |
BD137 |
Tranzystor ma�ej cz�stotliwo�ci du�ej mocy |
Ultra CEMI |
| 226 |
BD137 paired |
NPN Silicon Transistor for AF driver and power stages of medium output |
Siemens |
| 227 |
BD137-10 |
12.500W Switching NPN Plastic Leaded Transistor. 60V Vceo, 1.500A Ic, 63 - 160 hFE. Complementary BD138-10 |
Continental Device India Limited |
| 228 |
BD137-10 |
12.500W Switching NPN Plastic Leaded Transistor. 60V Vceo, 1.500A Ic, 63 - 160 hFE. Complementary BD138-10 |
Continental Device India Limited |
| 229 |
BD137-10 |
NPN High-speed, medium power, general purpose transistor, plastic case |
IPRS Baneasa |
| 230 |
BD137-10 |
TO-126 Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
| 231 |
BD137-10 |
1.5A plastic 10W medium power silicon NPN transistor |
Motorola |
| 232 |
BD137-10 |
NPN power transistors |
Philips |
| 233 |
BD137-10 |
NPN Silicon Transistor for AF driver and power stages of medium output |
Siemens |
| 234 |
BD137-10 |
NPN SILICON TRANSISTORS |
Siemens |
| 235 |
BD137-16 |
12.500W Switching NPN Plastic Leaded Transistor. 60V Vceo, 1.500A Ic, 100 - 250 hFE. Complementary BD138-16 |
Continental Device India Limited |
| 236 |
BD137-16 |
12.500W Switching NPN Plastic Leaded Transistor. 60V Vceo, 1.500A Ic, 100 - 250 hFE. Complementary BD138-16 |
Continental Device India Limited |
| 237 |
BD137-16 |
NPN High-speed, medium power, general purpose transistor, plastic case |
IPRS Baneasa |
| 238 |
BD137-16 |
TO-126 Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
| 239 |
BD137-16 |
1.5A plastic 10W medium power silicon NPN transistor |
Motorola |
| 240 |
BD137-16 |
NPN power transistors |
Philips |
| | | |
