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Datasheets for BN1

Datasheets found :: 280
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No. Part Name Description Manufacturer
211 MM24164WBN1T 16 Kbit Serial I2C BUS EEPROM ST Microelectronics
212 MP02HBN130-16 1600V phase control dual SCR, SCR/diode modules Dynex Semiconductor
213 MP02HBN130-18 1800V phase control dual SCR, SCR/diode modules Dynex Semiconductor
214 MP02HBN130-20 2000V phase control dual SCR, SCR/diode modules Dynex Semiconductor
215 MP02HBN175-10 1000V phase control dual SCR, SCR/diode modules Dynex Semiconductor
216 MP02HBN175-12 1200V phase control dual SCR, SCR/diode modules Dynex Semiconductor
217 MP02HBN175-14 1400V phase control dual SCR, SCR/diode modules Dynex Semiconductor
218 MP02HBN175-16 1600V phase control dual SCR, SCR/diode modules Dynex Semiconductor
219 MP04HBN14 Dual Thyristor, Thyristor/Diode Module Dynex Semiconductor
220 MR16R0824BN1 RAMBUS MODULE Samsung Electronic
221 MR16R0824BN1-CG6 RAMBUS MODULE Samsung Electronic
222 MR16R0824BN1-CK7 RAMBUS MODULE Samsung Electronic
223 MR16R0824BN1-CK8 RAMBUS MODULE Samsung Electronic
224 MR16R0826BN1 RAMBUS MODULE Samsung Electronic
225 MR16R0826BN1-CG6 RAMBUS MODULE Samsung Electronic
226 MR16R0826BN1-CK7 RAMBUS MODULE Samsung Electronic
227 MR16R0826BN1-CK8 RAMBUS MODULE Samsung Electronic
228 MR16R0828BN1 RAMBUS MODULE Samsung Electronic
229 MR16R0828BN1-CG6 RAMBUS MODULE Samsung Electronic
230 MR16R0828BN1-CK7 RAMBUS MODULE Samsung Electronic
231 MR16R0828BN1-CK8 RAMBUS MODULE Samsung Electronic
232 MR16R082CGBN1-CG6 RAMBUS MODULE Samsung Electronic
233 MR16R082CGBN1-CK7 RAMBUS MODULE Samsung Electronic
234 MR16R082CGBN1-CK8 RAMBUS MODULE Samsung Electronic
235 MT88E45BN1 4-Wire Calling Number Identification Circuit 2 (4-Wire CNIC2) Zarlink Semiconductor
236 NMC27C128BN15 150 ns, Vcc=5V+/-5%, 131,072-bit (16k x 8) high speed version one time programmable CMOS PROM National Semiconductor
237 NMC27C128BN150 150 ns, Vcc=5V+/-10%, 131,072-bit (16k x 8) high speed version one time programmable CMOS PROM National Semiconductor
238 NMC27C256BN15 150 ns, Vcc=5V+/-5%, 262,144-bit (32k x 8) high speed version one time programmable CMOS PROM National Semiconductor
239 NMC27C256BN150 150 ns, Vcc=5V+/-10%, 262,144-bit (32k x 8) high speed version one time programmable CMOS PROM National Semiconductor
240 SBN13001 0.75W Bipolar Junction Transistor, 0.2A Ic, 400V Vceo, 700V Vces SemiWell Semiconductor


Datasheets found :: 280
Page: | 4 | 5 | 6 | 7 | 8 | 9 | 10 |



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