| No. |
Part Name |
Description |
Manufacturer |
| 211 |
MMG05N60D |
OBSOLETE - IGBT N-Channel (0.5A, 600V) |
ON Semiconductor |
| 212 |
MMPQ6502 |
Quad NPN & PNP General Purpose Amplifier [Obsolete] |
Fairchild Semiconductor |
| 213 |
MMSF1310 |
OBSOLETE - Power MOSFET 10 Amps, 30 Volts |
ON Semiconductor |
| 214 |
MMSF3P03HD |
OBSOLETE - REPLACEMENT P/N# - NTMS3P03R2 |
ON Semiconductor |
| 215 |
MMSF4205 |
OBSOLETE - REPLACEMENT PN# - NTMS10P02R2 |
ON Semiconductor |
| 216 |
MMSF4N01HD |
OBSOLETE - REPLACEMENT P/N# - NTMS4N01R2 |
ON Semiconductor |
| 217 |
MMSF4P01HD |
OBSOLETE - Power MOSFET 4 Amps, 12 Volts |
ON Semiconductor |
| 218 |
MMSF7N03HD |
OBSOLETE - REPLACEMENT P/N NTMS7N03R2 |
ON Semiconductor |
| 219 |
MPX4100A |
MPX4100A Integrated Silicon Pressure Sensor Manifold Absolute Pressure Sensor On-Chip Signal Conditioned, Temperature Compensated and Calibrated |
Motorola |
| 220 |
MPX4101A |
?PubLcl_rm_rid="@1JK4dc"?MPX4101A?PubLcl_rm_rid="@1JK4dd"?Integrated Silicon Pressure Sensor for Manifold Absolute Pressure Applications On-Chip Signal Conditioned, Temperature Compensated and Calibrated |
Motorola |
| 221 |
MPX4105A |
MPX4105A Integrated Silicon Pressure Sensor for Manifold Absolute Pressure Applications On-Chip Signal Conditioned, Temperature Compensated and Calibrated |
Motorola |
| 222 |
MPX4115A |
MPX4115A Integrated Silicon Pressure Sensor for Manifold Absolute Pressure, Altimeter or Barometer Applications On-Chip Signal Conditioned, Temperature Compensated and Calibrated |
Motorola |
| 223 |
MPX4200A |
MPX4200A Integrated Silicon Pressure Sensor for Manifold Absolute Pressure Applications On-Chip Signal Conditioned, Temperature Compensated and Calibrated |
Motorola |
| 224 |
MPX4250A |
MPX4250A Integrated Silicon Pressure Sensor Manifold Absolute Pressure On-Chip Signal Conditioned Temperature Compensated and Calibrated |
Motorola |
| 225 |
MPXA6115A |
MPXA6115A High Temperature Accuracy Integrated Silicon Pressure Sensor for Manifold Absolute Pressure, Altimeter or Barometer Applications On-Chip Signal Conditioned, Temperature Compensated and Calibrated |
Motorola |
| 226 |
MPXAZ4100A |
MPXAZ4100A Media Resistant, Integrated Silicon Pressure Sensor for Manifold Absolute Pressure Applications On-Chip Signal Conditioned, Temperature Compensated, and Calibrated |
Motorola |
| 227 |
MPXAZ4115A |
MPXAZ4115A Media Resistant, Integrated Silicon Pressure Sensor for Manifold Absolute Pressure, Altimeter or Barometer Applications On-Chip Signal Conditioned, Temperature Compensated, and Calibrated |
Motorola |
| 228 |
MTB1306 |
OBSOLETE - Power MOSFET 75 Amps, 30 Volts, Logic Level |
ON Semiconductor |
| 229 |
MTB20N20E |
OBSOLETE - Power MOSFET 20 Amps, 200 Volts |
ON Semiconductor |
| 230 |
MTB4N80E |
OBSOLETE - 800 V, 4 A, POWER FET |
ON Semiconductor |
| 231 |
MTB4N80E1 |
OBSOLETE - N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 232 |
MTB75N03HDL |
OBSOLETE - Power MOSFET 75 Amps, 25 Volts, Logic Level |
ON Semiconductor |
| 233 |
MTB75N06HD |
OBSOLETE - REPLACEMENT P/N# NTB75N06 |
ON Semiconductor |
| 234 |
MTD12N06EZL |
OBSOLETE - REPLACEMENT P/N# - NONE |
ON Semiconductor |
| 235 |
MTD1N50E |
OBSOLETE - Power MOSFET 1 Amp, 500 Volts |
ON Semiconductor |
| 236 |
MTD1N60E |
OBSOLETE - 1 Amp DPAK Surface Mount Products, N-Channel, VDSS 600 |
ON Semiconductor |
| 237 |
MTD1P40E |
OBSOLETE - Power MOSFET 1 Amp, 400 Volts |
ON Semiconductor |
| 238 |
MTD2N50E |
OBSOLETE - Power MOSFET 2 Amps, 500 Volts |
ON Semiconductor |
| 239 |
MTD4N20E |
OBSOLETE - Power MOSFET 4 Amps, 200 Volts |
ON Semiconductor |
| 240 |
MTD9N10E |
OBSOLETE - Power MOSFET 9 Amps, 100 Volts |
ON Semiconductor |
| | | |
