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Datasheets for C-V

Datasheets found :: 352
Page: | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 |
No. Part Name Description Manufacturer
211 GTRA384802FC-V1 High Power RF GaN on SiC HEMT 400W, 48V, 3600 - 3800 MHz Wolfspeed
212 GTVA107001EC/FC-V1 High Power RF GaN on SiC HEMT 700W, 50V, 960 - 1215 MHz Wolfspeed
213 GTVA126001EC/FC-V1 High Power RF GaN on SiC HEMT, 600W, 50V, 1200MHz to 1400MHz Wolfspeed
214 GTVA261802FC-V1 High Power RF GaN on SiC HEMT 170W, 48V, 2620 - 2690 MHz Wolfspeed
215 GTVA263202FC-V1 High Power RF GaN on SiC HEMT 340W, 48V, 2620 - 2690 MHz Wolfspeed
216 GTVA355001EC-FC-V1 High Power RF GaN on SiC HEMTs 500W, 50V, 2900 - 3500 MHz Wolfspeed
217 ISL6557A PWM Controller, 2-4 Phase, 5-Bit Dynamic-VID, �0.8% Regulation, Adjust UV Threshold Intersil
218 K6T4008C1C-VB55 512Kx8 bit Low Power CMOS Static RAM Samsung Electronic
219 K6T4008C1C-VB70 512Kx8 bit Low Power CMOS Static RAM Samsung Electronic
220 K6T4008C1C-VF55 512Kx8 bit Low Power CMOS Static RAM Samsung Electronic
221 K6T4008C1C-VF70 512Kx8 bit Low Power CMOS Static RAM Samsung Electronic
222 K6T4008U1C-VB10 512Kx8 bit Low Power and Low Voltage CMOS Static RAM Samsung Electronic
223 K6T4008U1C-VB70 512Kx8 bit Low Power and Low Voltage CMOS Static RAM Samsung Electronic
224 K6T4008U1C-VB85 512Kx8 bit Low Power and Low Voltage CMOS Static RAM Samsung Electronic
225 K6T4008U1C-VF10 512Kx8 bit Low Power and Low Voltage CMOS Static RAM Samsung Electronic
226 K6T4008U1C-VF70 512Kx8 bit Low Power and Low Voltage CMOS Static RAM Samsung Electronic
227 K6T4008U1C-VF85 512Kx8 bit Low Power and Low Voltage CMOS Static RAM Samsung Electronic
228 K6T4008V1C-VB70 512Kx8 bit Low Power and Low Voltage CMOS Static RAM Samsung Electronic
229 K6T4008V1C-VB85 512Kx8 bit Low Power and Low Voltage CMOS Static RAM Samsung Electronic
230 K6T4008V1C-VF70 512Kx8 bit Low Power and Low Voltage CMOS Static RAM Samsung Electronic
231 K6T4008V1C-VF85 512Kx8 bit Low Power and Low Voltage CMOS Static RAM Samsung Electronic
232 K9F2808U0C-V 16M x 8 Bit NAND Flash Memory Samsung Electronic
233 K9F2808U0C-VCB0 16M x 8 Bit / 8M x 16 Bit NAND Flash Memory Samsung Electronic
234 K9F2808U0C-VIB0 16M x 8 Bit / 8M x 16 Bit NAND Flash Memory Samsung Electronic
235 K9F5608U0C-V 512Mb/256Mb 1.8V NAND Flash Errata Samsung Electronic
236 K9F5608U0C-VCB0 512Mb/256Mb 1.8V NAND Flash Errata Samsung Electronic
237 K9F5608U0C-VIB0 512Mb/256Mb 1.8V NAND Flash Errata Samsung Electronic
238 K9F6408U0C-V 8M x 8 Bit Bit NAND Flash Memory Samsung Electronic
239 KC1850 C-values 220 pF - 0.01 µF, Voltage 63 - 160 VDC, Flat and linear TC, PCM 5 Vishay
240 KP1830 C-values 100 pF - 0.033 µF, Voltage 63 - 630 VDC, High pulse load, Tolerances to 1%, Low losses, PCM 5 Vishay


Datasheets found :: 352
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