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Datasheets for CEME

Datasheets found :: 7267
Page: | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 |
No. Part Name Description Manufacturer
211 2N4352 P-Channel Enhancement Mode MOSFET Amplifier/Switch Calogic
212 2N4398 High-power PNP silicon transistor, serves as direct replacements for germanium high-power devices Motorola
213 2N4399 High-power PNP silicon transistor, serves as direct replacements for germanium high-power devices Motorola
214 2N6371 Hometaxial II High-Power Silicon NPN Transistor is the direct replacement for RCA-40251 RCA Solid State
215 2N6659 N-CHANNEL ENHANCEMENT MODE MOS TRANSISTOR SemeLAB
216 2N6660 N-Channel Enhancement-Mode Vertical DMOS FETs Supertex Inc
217 2N6661 N-Channel Enhancement Mode MOSFETs Microchip
218 2N6661 N-CHANNEL ENHANCEMENT MODE MOS TRANSISTOR SemeLAB
219 2N6661 MOSPOWER N-Channel Enhancement Mode Transistor 80V 0.28A Siliconix
220 2N6661 N-Channel Enhancement-Mode Vertical DMOS FETs Supertex Inc
221 2N6755 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current(at Tc 25deg) 12A. General Electric Solid State
222 2N6756 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 14A. General Electric Solid State
223 2N6756 MOSPOWER N-Channel Enhancement Mode Transistor 100V 14A Siliconix
224 2N6757 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 8.0A. General Electric Solid State
225 2N6758 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 9.0A. General Electric Solid State
226 2N6758 MOSPOWER N-Channel Enhancement Mode Transistor 200V 9A Siliconix
227 2N6759 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 4.5A. General Electric Solid State
228 2N6760 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 5.5A. General Electric Solid State
229 2N6760 MOSPOWER N-Channel Enhancement Mode Transistor 400V 5.5A Siliconix
230 2N6761 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 4.0A. General Electric Solid State
231 2N6762 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 4.5A. General Electric Solid State
232 2N6762 MOSPOWER N-Channel Enhancement Mode Transistor 500V 4.5A Siliconix
233 2N6764 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 38A. General Electric Solid State
234 2N6764 N-channel enhancement mode MOSFET power transistor Omnirel
235 2N6764 MOSPOWER N-Channel Enhancement Mode Transistor 100V 38A Siliconix
236 2N6766 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 30A. General Electric Solid State
237 2N6766 N-channel enhancement mode MOSFET power transistor Omnirel
238 2N6766 MOSPOWER N-Channel Enhancement Mode Transistor 200V 30A Siliconix
239 2N6768 N-channel enhancement mode MOSFET power transistor Omnirel
240 2N6768 MOSPOWER N-Channel Enhancement Mode Transistor 400V 14A Siliconix


Datasheets found :: 7267
Page: | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 |



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