| No. |
Part Name |
Description |
Manufacturer |
| 211 |
2N4352 |
P-Channel Enhancement Mode MOSFET Amplifier/Switch |
Calogic |
| 212 |
2N4398 |
High-power PNP silicon transistor, serves as direct replacements for germanium high-power devices |
Motorola |
| 213 |
2N4399 |
High-power PNP silicon transistor, serves as direct replacements for germanium high-power devices |
Motorola |
| 214 |
2N6659 |
N-CHANNEL ENHANCEMENT MODE MOS TRANSISTOR |
SemeLAB |
| 215 |
2N6660 |
N-Channel Enhancement-Mode Vertical DMOS FETs |
Supertex Inc |
| 216 |
2N6661 |
N-Channel Enhancement Mode MOSFETs |
Microchip |
| 217 |
2N6661 |
N-CHANNEL ENHANCEMENT MODE MOS TRANSISTOR |
SemeLAB |
| 218 |
2N6661 |
N-Channel Enhancement-Mode Vertical DMOS FETs |
Supertex Inc |
| 219 |
2N6755 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current(at Tc 25deg) 12A. |
General Electric Solid State |
| 220 |
2N6756 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 14A. |
General Electric Solid State |
| 221 |
2N6757 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 8.0A. |
General Electric Solid State |
| 222 |
2N6758 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 9.0A. |
General Electric Solid State |
| 223 |
2N6759 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 4.5A. |
General Electric Solid State |
| 224 |
2N6760 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 5.5A. |
General Electric Solid State |
| 225 |
2N6761 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 4.0A. |
General Electric Solid State |
| 226 |
2N6762 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 4.5A. |
General Electric Solid State |
| 227 |
2N6764 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 38A. |
General Electric Solid State |
| 228 |
2N6764 |
N-channel enhancement mode MOSFET power transistor |
Omnirel |
| 229 |
2N6766 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 30A. |
General Electric Solid State |
| 230 |
2N6766 |
N-channel enhancement mode MOSFET power transistor |
Omnirel |
| 231 |
2N6768 |
N-channel enhancement mode MOSFET power transistor |
Omnirel |
| 232 |
2N6770 |
N-channel enhancement mode MOSFET power transistor |
Omnirel |
| 233 |
2N6781 |
60 V, 06 ohm, N-channel enhancement-mode D-MOS power FET |
Topaz Semiconductor |
| 234 |
2N6782 |
N-channel enhancement-mode power field-effect transistor. 3.5 A, 100V. |
General Electric Solid State |
| 235 |
2N6782 |
100 V, 06 ohm, N-channel enhancement-mode D-MOS power FET |
Topaz Semiconductor |
| 236 |
2N6788 |
N-channel enhancement-mode power field-effect transistor. 6.0 A, 100V. |
General Electric Solid State |
| 237 |
2N6796 |
N-channel enhancement-mode power field-effect transistor. 8.0 A, 100V. |
General Electric Solid State |
| 238 |
2N6796 |
N-channel enhancement mode MOSFET power transistor |
Omnirel |
| 239 |
2N6798 |
N-channel enhancement mode MOSFET power transistor |
Omnirel |
| 240 |
2N6798 |
N-CHANNEL ENHANCEMENT MODE TRANSISTOR |
SemeLAB |
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