| No. |
Part Name |
Description |
Manufacturer |
| 211 |
AOUS66920 |
Single P-Channel MOSFETs (8V - 60V) |
Alpha & Omega Semiconductor |
| 212 |
AOWF600A70F |
Single P-Channel MOSFETs (8V - 60V) |
Alpha & Omega Semiconductor |
| 213 |
AOY423 |
Single P-Channel MOSFETs (8V - 60V) |
Alpha & Omega Semiconductor |
| 214 |
AOY66920 |
Single P-Channel MOSFETs (8V - 60V) |
Alpha & Omega Semiconductor |
| 215 |
BF1005 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) |
Siemens |
| 216 |
BF1005S |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) |
Siemens |
| 217 |
BF1005SW |
Silicon N-Channel MOSFET Tetrode |
Infineon |
| 218 |
BF1005W |
Silicon N-Channel MOSFET Tetrode |
Infineon |
| 219 |
BF1009 |
Silicon N-Channel MOSFET Tetrode for ... |
Infineon |
| 220 |
BF1009 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9 V Integrated stabilized bias network |
Siemens |
| 221 |
BF1009S |
Silicon N-Channel MOSFET Tetrode for ... |
Infineon |
| 222 |
BF1009S |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9V Integrated bias network) |
Siemens |
| 223 |
BF1012 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 12V Integrated stabilized bias network |
Siemens |
| 224 |
BF1012S |
Silicon N-Channel MOSFET Tetrode |
Infineon |
| 225 |
BF1012S |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) |
Siemens |
| 226 |
BF1012W |
SILICON N-CHANNEL MOSFET TETRODE (For low-noise, gain-controlled input stages up to 1 GHz) |
Siemens |
| 227 |
BF2000 |
Silicon N Channel MOSFET Tetrode |
Siemens |
| 228 |
BF2000W |
Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise, gain-controlled input stages up to 1 GHz) |
Siemens |
| 229 |
BF2030 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) |
Siemens |
| 230 |
BF2030W |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) |
Siemens |
| 231 |
BF2040 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) |
Siemens |
| 232 |
BF2040W |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) |
Siemens |
| 233 |
BF987 |
Silicon N-Channel MOSFET Triode |
Infineon |
| 234 |
BF987 |
SILICON N CHANNEL MOSFET TRIODE (For high-frequency stages up to 300 MHz, preferably in FM applications High overload capability) |
Siemens |
| 235 |
BF994 |
Silicon N Channel MOSFET Tetrode (For VHF applications/ especially for input and mixer stages with a wide tuning range/ e.g. in CATV tuners) |
Siemens |
| 236 |
BF994S |
Silicon N Channel MOSFET Tetrode (For VHF applications, especially for input and mixer stages with a wide tuning range, e.g. in CATV tuners) |
Siemens |
| 237 |
BF995 |
Silicon N Channel MOSFET Tetrode (For input and mixer stages in FM and VHF TV tuners) |
Siemens |
| 238 |
BF996S |
Silicon N Channel MOSFET Tetrode (For input stages in UHF TV tuners High transconductance Low noise figure) |
Siemens |
| 239 |
BF997 |
Silicon N Channel MOSFET Tetrode (Integrated suppression network against spurious VHF oscillations) |
Siemens |
| 240 |
BF998 |
Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise, gain-controlled input stages up to 1 GHz) |
Siemens |
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