| No. |
Part Name |
Description |
Manufacturer |
| 211 |
1S2234 |
Silicon diffused junction rectifier 1.5A 800V |
TOSHIBA |
| 212 |
1S2235 |
Silicon diffused junction rectifier 1.5A 1000V |
TOSHIBA |
| 213 |
1S2237B |
Silicon diffused junction high-voltage rectifier, 18kV |
TOSHIBA |
| 214 |
1S2576 |
Silicon diffused junction rectifier 1A 100V |
TOSHIBA |
| 215 |
1S2577 |
Silicon diffused junction rectifier 1A 200V |
TOSHIBA |
| 216 |
1S2578 |
Silicon diffused junction rectifier 1A 400V |
TOSHIBA |
| 217 |
1S2579 |
Silicon diffused junction rectifier 1A 600V |
TOSHIBA |
| 218 |
1S2580 |
Silicon diffused junction rectifier 1A 800V |
TOSHIBA |
| 219 |
1S2581 |
Silicon diffused junction rectifier 1A 1000V |
TOSHIBA |
| 220 |
1S2582 |
Silicon diffused junction rectifier 3A 100V |
TOSHIBA |
| 221 |
1S2583 |
Silicon diffused junction rectifier 3A 200V |
TOSHIBA |
| 222 |
1S2584 |
Silicon diffused junction rectifier 3A 400V |
TOSHIBA |
| 223 |
1S2585 |
Silicon diffused junction rectifier 3A 600V |
TOSHIBA |
| 224 |
1S2586 |
Silicon diffused junction rectifier 3A 800V |
TOSHIBA |
| 225 |
1S2615 |
Silicon diffused junction fast recovery rectifier |
TOSHIBA |
| 226 |
1S2616 |
Silicon diffused junction fast recovery rectifier |
TOSHIBA |
| 227 |
1S2617 |
Silicon diffused junction fast recovery rectifier |
TOSHIBA |
| 228 |
1S310 |
Silicon Diffused Junction Diode, VR(peak)=-50V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 229 |
1S310H |
Silicon Diffused Junction Diode, VR(peak)=-50V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 230 |
1S311 |
Silicon Diffused Junction Diode, VR(peak)=-100V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 231 |
1S311H |
Silicon Diffused Junction Diode, VR(peak)=-100V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 232 |
1S312 |
Silicon Diffused Junction Diode, VR(peak)=-200V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 233 |
1S312H |
Silicon Diffused Junction Diode, VR(peak)=-200V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 234 |
1S313 |
Silicon Diffused Junction Diode, VR(peak)=-300V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 235 |
1S313H |
Silicon Diffused Junction Diode, VR(peak)=-300V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 236 |
1S314 |
Silicon Diffused Junction Diode, VR(peak)=-400V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 237 |
1S314H |
Silicon Diffused Junction Diode, VR(peak)=-400V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 238 |
1S315 |
Silicon Diffused Junction Diode, VR(peak)=-500V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 239 |
1S315H |
Silicon Diffused Junction Diode, VR(peak)=-500V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 240 |
1S84 |
Silicon Diffused Rectifier |
Hitachi Semiconductor |
| | | |
