No. |
Part Name |
Description |
Manufacturer |
211 |
MJ2812 |
32 words x 8 bit FIFO memory |
PLESSEY Semiconductors |
212 |
MJ2812 |
32 WORDS X 8 BIT FIFO MEMORY |
Zarlink Semiconductor |
213 |
MJ2812M |
32 words x 8 bit FIFO memory |
PLESSEY Semiconductors |
214 |
TC528128BJ-10 |
100ns; V(cc): -1 to +7V; V(in/out); -1.0 to +7.0V; 1W; 50mA; silicon gate CMOS 131.072 words x 8 Bits multiport DRAM |
TOSHIBA |
215 |
TC528128BJ-80 |
80ns; V(cc): -1 to +7V; V(in/out); -1.0 to +7.0V; 1W; 50mA; silicon gate CMOS 131.072 words x 8 Bits multiport DRAM |
TOSHIBA |
216 |
TC528128BZ-10 |
100ns; V(cc): -1 to +7V; V(in/out); -1.0 to +7.0V; 1W; 50mA; silicon gate CMOS 131.072 words x 8 Bits multiport DRAM |
TOSHIBA |
217 |
TC528128BZ-80 |
80ns; V(cc): -1 to +7V; V(in/out); -1.0 to +7.0V; 1W; 50mA; silicon gate CMOS 131.072 words x 8 Bits multiport DRAM |
TOSHIBA |
218 |
TC528267 |
262144 Words x 8 Bits Multiport DRAM |
TOSHIBA |
219 |
TC554001 |
524,228 WORDS x 8 BIT STATIC RAM |
TOSHIBA |
220 |
TC554001AFI |
524,228 WORDS x 8 BIT STATIC RAM |
TOSHIBA |
221 |
TC554001ATR-10L |
524,228 WORDS x 8 BIT STATIC RAM |
TOSHIBA |
222 |
TC554001ATR-85L |
524,228 WORDS x 8 BIT STATIC RAM |
TOSHIBA |
223 |
TC554001ATRI-10L |
524,228 WORDS x 8 BIT STATIC RAM |
TOSHIBA |
224 |
TC554001ATRI-70L |
524,228 WORDS x 8 BIT STATIC RAM |
TOSHIBA |
225 |
TC554001ATRI-85L |
524,228 WORDS x 8 BIT STATIC RAM |
TOSHIBA |
226 |
TC554001FI-10L |
524, 288 words x 8 bit static RAM, access time 100ns |
TOSHIBA |
227 |
TC554001FI-85L |
524, 288 words x 8 bit static RAM, access time 85ns |
TOSHIBA |
228 |
TC554001FL-10V |
524, 288 words x 8 bit static RAM, access time 100ns |
TOSHIBA |
229 |
TC554001FL-70V |
524, 288 words x 8 bit static RAM, access time 70ns |
TOSHIBA |
230 |
TC554001FL-85V |
524, 288 words x 8 bit static RAM, access time 85ns |
TOSHIBA |
231 |
TC554001FTI-10L |
524, 288 words x 8 bit static RAM, access time 100ns |
TOSHIBA |
232 |
TC554001FTI-85L |
524, 288 words x 8 bit static RAM, access time 85ns |
TOSHIBA |
233 |
TC554001FTL-10V |
524, 288 words x 8 bit static RAM, access time 100ns |
TOSHIBA |
234 |
TC554001FTL-70V |
524, 288 words x 8 bit static RAM, access time 70ns |
TOSHIBA |
235 |
TC554001FTL-85V |
524, 288 words x 8 bit static RAM, access time 85ns |
TOSHIBA |
236 |
TC57512AD-15 |
65,536 WORDS x 8 BITS CMOS UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY |
etc |
237 |
TC57512AD-15 |
150ns; V(cc): -0.6 to +7V; 1.5W; 65,536 words x 8 bits CMOS UV erasable and electrically programmable read only memory |
TOSHIBA |
238 |
TC57512AD-20 |
65,536 WORDS x 8 BITS CMOS UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY |
etc |
239 |
TC57512AD-20 |
200ns; V(cc): -0.6 to +7V; 1.5W; 65,536 words x 8 bits CMOS UV erasable and electrically programmable read only memory |
TOSHIBA |
240 |
TMC3220 |
Three Port Register File 32 Words x 8 Bits, 20MHz |
TRW |
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