| No. |
Part Name |
Description |
Manufacturer |
| 211 |
BZY91C185 |
Diode Zener Single 17.95V 6% 100W 2-Pin DO-5 |
New Jersey Semiconductor |
| 212 |
BZY91C18R |
Diode Zener Single 17.95V 6% 100W 2-Pin DO-5 |
New Jersey Semiconductor |
| 213 |
BZY93C18 |
Diode Zener Single 17.95V 6% 20W 2-Pin DO-4 |
New Jersey Semiconductor |
| 214 |
BZY93C180 |
Diode Zener Single 17.95V 6% 20W 2-Pin DO-4 |
New Jersey Semiconductor |
| 215 |
BZY93C18R |
Diode Zener Single 17.95V 6% 20W 2-Pin DO-4 |
New Jersey Semiconductor |
| 216 |
CZRA3017 |
3.0 watt surface mount zener diode. Nom zener voltage 17 V. |
Comchip Technology |
| 217 |
CZRC5354B |
5.0 watt surface mount zener diode. Nom zener voltage 17 V. Tolerance +-5 %. |
Comchip Technology |
| 218 |
CZRC5385B |
5.0 watt surface mount zener diode. Nom zener voltage 170 V. Tolerance +-5 %. |
Comchip Technology |
| 219 |
DTV32 |
High Voltage Damper Diodes, Forward Current 10A, Reverse Voltage 1500V, Reverse Recovery Time 175ns |
Vishay |
| 220 |
DTV32B |
High Voltage Damper Diodes, Forward Current 10A, Reverse Voltage 1500V, Reverse Recovery Time 175ns |
Vishay |
| 221 |
DTV32F |
High Voltage Damper Diodes, Forward Current 10A, Reverse Voltage 1500V, Reverse Recovery Time 175ns |
Vishay |
| 222 |
FDLL3070 |
High speed high conductance diode. Working inverse voltage 175 V. |
Fairchild Semiconductor |
| 223 |
FDLL459 |
Low leakage diode. Working inverse voltage 175V. |
Fairchild Semiconductor |
| 224 |
FDLL459A |
Low leakage diode. Working inverse voltage 175V. |
Fairchild Semiconductor |
| 225 |
FDLL463A |
General purpose high conductance diode. Working inverse voltage 175V. |
Fairchild Semiconductor |
| 226 |
FDLL4938 |
High speed high conductance diode. Working inverse voltage 175 V. |
Fairchild Semiconductor |
| 227 |
M67730L |
RF POWER MODULE 175-200MHz, 12.5V, 30W, FM MOBILE RADIO |
Mitsubishi Electric Corporation |
| 228 |
MBR10H150CT |
Dual High-Voltage Schottky Rectifiers, Forward Current 10A, Reverse Voltage 150V, Max. Junction Temperature 175�C |
Vishay |
| 229 |
MJ10004 |
20A NPN silicon power darlington transistor with base-emitter speedup diode 175W 350V SWITCHMODE SERIES |
Motorola |
| 230 |
MJ10008 |
20A NPN silicon power darlington transistor with base-emitter speedup diode 175W 450V SWITCHMODE SERIES |
Motorola |
| 231 |
MMBZ5247B |
Surface mount zener diode. Nominal zener voltage 17.0V, test current 7.4mA. |
Jinan Gude Electronic Device |
| 232 |
MZT3316 |
50 watt zener transient suppressor. Nom zener voltage 17 V. |
Motorola |
| 233 |
MZT3348 |
50 watt zener transient suppressor. Nom zener voltage 175 V. |
Motorola |
| 234 |
P4KE170C |
400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 170 V. Bidirectional. |
Jinan Gude Electronic Device |
| 235 |
P4KE170CA |
400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 170 V. Bidirectional. |
Jinan Gude Electronic Device |
| 236 |
P6KE170A |
400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 170 V. |
Jinan Gude Electronic Device |
| 237 |
P6KE170C |
400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 170 V. Bidirectional. |
Jinan Gude Electronic Device |
| 238 |
P6KE170CA |
400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 170 V. Bidirectional. |
Jinan Gude Electronic Device |
| 239 |
P6KE18CARL |
Diode TVS Single Bi-Dir 15.3V 600W 2-Pin Case 17-02 T/R |
New Jersey Semiconductor |
| 240 |
P6KE20CARL |
Diode TVS Single Bi-Dir 17.1V 600W 2-Pin Case 17-02 T/R |
New Jersey Semiconductor |
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