| No. |
Part Name |
Description |
Manufacturer |
| 211 |
1N3156 |
Temperature-compensated zener reference diode 8.4V |
Motorola |
| 212 |
1N3156 |
Temperature-compensated silicon zener reference diode. Max voltage change 0.026 V. 500 W. |
Motorola |
| 213 |
1N3156 |
Voltage reference diode (temperature compensated) |
SESCOSEM |
| 214 |
1N3156A |
8.4 V0LT NOMINAL ZENER VOLTAGE |
Compensated Devices Incorporated |
| 215 |
1N3156A |
Temperature-compensated zener reference diode 8.4V |
Motorola |
| 216 |
1N3156A |
Temperature-compensated silicon zener reference diode. Max voltage change 0.034 V. 500 W. |
Motorola |
| 217 |
1N3156A |
Voltage reference diode (temperature compensated) |
SESCOSEM |
| 218 |
1N3157 |
8.4 V0LT NOMINAL ZENER VOLTAGE |
Compensated Devices Incorporated |
| 219 |
1N3157 |
Temperature-compensated zener reference diode 8.4V |
Motorola |
| 220 |
1N3157 |
Temperature-compensated silicon zener reference diode. Max voltage change 0.013 V. 500 W. |
Motorola |
| 221 |
1N3157 |
Voltage reference diode (temperature compensated) |
SESCOSEM |
| 222 |
1N3157A |
8.4 V0LT NOMINAL ZENER VOLTAGE |
Compensated Devices Incorporated |
| 223 |
1N3157A |
Temperature-compensated zener reference diode 8.4V |
Motorola |
| 224 |
1N3157A |
Temperature-compensated silicon zener reference diode. Max voltage change 0.017 V. 500 W. |
Motorola |
| 225 |
1N3157A |
Voltage reference diode (temperature compensated) |
SESCOSEM |
| 226 |
1N3496 |
Voltage reference diode (temperature compensated)Silicon signal diode - high voltage switching |
SESCOSEM |
| 227 |
1N3497 |
Voltage reference diode (temperature compensated)Silicon signal diode - high voltage switching |
SESCOSEM |
| 228 |
1N3498 |
Voltage reference diode (temperature compensated)Silicon signal diode - high voltage switching |
SESCOSEM |
| 229 |
1N3498 |
Silicon Voltage Reference Diode temperature compensated 6.2V |
Transitron Electronic |
| 230 |
1N3499 |
Voltage reference diode (temperature compensated)Silicon signal diode - high voltage switching |
SESCOSEM |
| 231 |
1N3499 |
Silicon Voltage Reference Diode temperature compensated 6.2V |
Transitron Electronic |
| 232 |
1N3500 |
Voltage reference diode (temperature compensated) |
SESCOSEM |
| 233 |
1N3500 |
Silicon Voltage Reference Diode temperature compensated 6.2V |
Transitron Electronic |
| 234 |
1N3513A |
Temperature Compensated Zeners (TCZ) |
Microsemi |
| 235 |
1N3600 |
SWITCHING DIODES |
Compensated Devices Incorporated |
| 236 |
1N3600UR |
SWITCHING DIODE |
Compensated Devices Incorporated |
| 237 |
1N3604 |
Silicon planar switching diodes in a glass package |
Siemens |
| 238 |
1N3734 |
Photosensitive Device BV=100V, Sensitivity=0.05µA/fc |
Motorola |
| 239 |
1N3734 |
Photosensitive Device BV=100V, Sensitivity=0.05µA/fc |
Motorola |
| 240 |
1N3821 |
1 WATT ZENER DIODE |
Compensated Devices Incorporated |
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