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Datasheets for ER AP

Datasheets found :: 2872
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No. Part Name Description Manufacturer
211 2N2904 PNP Silicon annular star transistor for high-speed switching and DC to UHF amplifier applications, 2N2218 NPN complementary Motorola
212 2N2904A PNP silicon annular Star transistor for high-speed switching, complementary circuitry and DC to VHF amplifier applications Motorola
213 2N2905 PNP silicon annular Star transistor for high-speed switching, complementary circuitry and DC to VHF amplifier applications Motorola
214 2N2905 PNP Silicon annular star transistor for high-speed switching and DC to UHF amplifier applications, 2N2219 NPN complementary Motorola
215 2N2905A PNP silicon annular Star transistor for high-speed switching, complementary circuitry and DC to VHF amplifier applications Motorola
216 2N2906 PNP silicon annular Star transistor for high-speed switching, complementary circuitry and DC to VHF amplifier applications Motorola
217 2N2906 PNP Silicon annular star transistor for high-speed switching and DC to UHF amplifier applications, 2N2221 NPN complementary Motorola
218 2N2906A PNP silicon annular Star transistor for high-speed switching, complementary circuitry and DC to VHF amplifier applications Motorola
219 2N2907 PNP Silicon annular star transistor for high-speed switching and DC to UHF amplifier applications, 2N2222 NPN complementary Motorola
220 2N2907A PNP silicon annular Star transistor for high-speed switching, complementary circuitry and DC to VHF amplifier applications Motorola
221 2N2944 PNP silicon annular transistor designed for low-level, high-speed chopper applications Motorola
222 2N2945 PNP silicon annular transistor designed for low-level, high-speed chopper applications Motorola
223 2N2946 PNP silicon annular transistor designed for low-level, high-speed chopper applications Motorola
224 2N2947 NPN silicon annular transistor for power amplifier applications to 100MHz Motorola
225 2N2948 NPN silicon annular transistor for power amplifier applications to 100MHz Motorola
226 2N2949 NPN silicon annular transistors for power amplifier and driver applications to 100MHz, TO-107 case Motorola
227 2N2950 NPN silicon annular transistors for power amplifier and driver applications to 100MHz, TO-102 case Motorola
228 2N297A PNP germanium power transistor for military and industrial power switching and amplifier applications Motorola
229 2N3043 Dual NPN silicon transistor designed for low-level, low-noise differential amplifier applications Motorola
230 2N3044 Dual NPN silicon transistor designed for low-level, low-noise differential amplifier applications Motorola
231 2N3045 Dual NPN silicon transistor designed for low-level, low-noise differential amplifier applications Motorola
232 2N3046 Dual NPN silicon transistor designed for low-level, low-noise differential amplifier applications Motorola
233 2N3047 Dual NPN silicon transistor designed for low-level, low-noise differential amplifier applications Motorola
234 2N3048 Dual NPN silicon transistor designed for low-level, low-noise differential amplifier applications Motorola
235 2N3049 Dual PNP silicon transistor designed for low-level, low-noise differential amplifier applications Motorola
236 2N3050 Dual PNP silicon transistor designed for low-level, low-noise differential amplifier applications Motorola
237 2N3055 High power NPN transistor. General-purpose switching and amplifier application. Vceo = 60Vdc, Vcer = 70Vdc, Vcb = 100Vdc, Veb = 15Vdc, Ic = 7Adc, Ib = 7Adc, PD = 115W. USHA India LTD
238 2N3055H NPN silicon power transistor. 15Amp, 100V, 115Watt. These devices are designed for general purpose switching and amplifier applications. USHA India LTD
239 2N3114 NPN silicon transistor designed for high-voltage, low power video amplifier applications Motorola
240 2N3252 NPN silicon transistor for high-current saturated switching and core driver applications Motorola


Datasheets found :: 2872
Page: | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 |



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