| No. |
Part Name |
Description |
Manufacturer |
| 211 |
1N5395G |
1.5 A, glass passivated rectifier. Max recurrent peak reverse voltage 400 V, max RMS voltage 280 V, max D. C blocking voltage 400 V. |
Jinan Gude Electronic Device |
| 212 |
1N5397G |
1.5 A, glass passivated rectifier. Max recurrent peak reverse voltage 600 V, max RMS voltage 420 V, max D. C blocking voltage 600 V. |
Jinan Gude Electronic Device |
| 213 |
1N5398G |
1.5 A, glass passivated rectifier. Max recurrent peak reverse voltage 800 V, max RMS voltage 560 V, max D. C blocking voltage 800 V. |
Jinan Gude Electronic Device |
| 214 |
1N5399G |
1.5 A, glass passivated rectifier. Max recurrent peak reverse voltage 1000 V, max RMS voltage 700 V, max D. C blocking voltage 1000 V. |
Jinan Gude Electronic Device |
| 215 |
1W010 |
Single phase 1.0 A silicon bridge rectifier. Max recurrent peak reverse voltage 1000 V. |
Jinan Gude Electronic Device |
| 216 |
2961 |
HIGH-CURRENT HALF-BRIDGE PRINTHEAD/MOTOR DRIVER.WITH INTERNAL CURRENT SENSING AND CONTROL |
Allegro MicroSystems |
| 217 |
2N1613 |
NPN small signal general purpose amplifier. |
Fairchild Semiconductor |
| 218 |
2N2484 |
NPN low level low noise amplifier. |
Fairchild Semiconductor |
| 219 |
2N3019 |
NPN small signal general purpose amplifier. |
Fairchild Semiconductor |
| 220 |
2N3020 |
NPN small signal general purpose amplifier. |
Fairchild Semiconductor |
| 221 |
2N3053 |
NPN small signal general purpose amplifier. |
Fairchild Semiconductor |
| 222 |
2N3117 |
NPN low level low noise amplifier. |
Fairchild Semiconductor |
| 223 |
2N3650 |
35A silicon controlled rectifier. Vrsom 150V. |
General Electric Solid State |
| 224 |
2N3651 |
35A silicon controlled rectifier. Vrsom 300V. |
General Electric Solid State |
| 225 |
2N3652 |
35A silicon controlled rectifier. Vrsom 400V. |
General Electric Solid State |
| 226 |
2N3653 |
35A silicon controlled rectifier. Vrsom 500V. |
General Electric Solid State |
| 227 |
2N3668 |
12.5A silicon controlled rectifier. Vrm(non-rep) 150V. |
General Electric Solid State |
| 228 |
2N3669 |
12.5A silicon controlled rectifier. Vrm(non-rep) 330V. |
General Electric Solid State |
| 229 |
2N3670 |
12.5A silicon controlled rectifier. Vrm(non-rep) 660V. |
General Electric Solid State |
| 230 |
2N3700 |
NPN small signal general purpose amplifier. |
Fairchild Semiconductor |
| 231 |
2N3701 |
NPN small signal general purpose amplifier. |
Fairchild Semiconductor |
| 232 |
2N3870 |
35A silicon controlled rectifier. Vrsom(non-rep) 150V. |
General Electric Solid State |
| 233 |
2N3871 |
35A silicon controlled rectifier. Vrsom(non-rep) 330V. |
General Electric Solid State |
| 234 |
2N3872 |
35A silicon controlled rectifier. Vrsom(non-rep) 660V. |
General Electric Solid State |
| 235 |
2N3873 |
35A silicon controlled rectifier. Vrsom(non-rep) 700V. |
General Electric Solid State |
| 236 |
2N3896 |
35A silicon controlled rectifier. Vrsom(non-rep) 150V. |
General Electric Solid State |
| 237 |
2N3897 |
35A silicon controlled rectifier. Vrsom(non-rep) 330V. |
General Electric Solid State |
| 238 |
2N3898 |
35A silicon controlled rectifier. Vrsom(non-rep) 660V. |
General Electric Solid State |
| 239 |
2N3899 |
35A silicon controlled rectifier. Vrsom(non-rep) 700V. |
General Electric Solid State |
| 240 |
2N3962 |
PNP low level low noise amplifier. |
Fairchild Semiconductor |
| | | |
