| No. |
Part Name |
Description |
Manufacturer |
| 211 |
ADA4410-6ACPZ-R7 |
Integrated Video Filter with Selectable Cutoff Frequencies for GBR, HD/SD, Y, C, and CVBS |
Analog Devices |
| 212 |
ADA4410-6ACPZ-RL |
Integrated Video Filter with Selectable Cutoff Frequencies for GBR, HD/SD, Y, C, and CVBS |
Analog Devices |
| 213 |
ADA4412-3 |
Integrated Triple Video Filter with Selectable Cutoff Frequencies for RGB, HD and SD |
Analog Devices |
| 214 |
AEY30 |
Tunnel diodes for low-noise amplifiers and fast switches for the sub-nanosecond range, datasheet in german language |
Siemens |
| 215 |
AEY30 |
Tunnel diodes for low-noise amplifiers and fast switches for the sub-nanosecond range, datasheet in german language |
Siemens |
| 216 |
AEY30A |
Tunnel diodes for low-noise amplifiers and fast switches for the sub-nanosecond range, datasheet in german language |
Siemens |
| 217 |
AEY30A |
Tunnel diodes for low-noise amplifiers and fast switches for the sub-nanosecond range, datasheet in german language |
Siemens |
| 218 |
AEY30B |
Tunnel diodes for low-noise amplifiers and fast switches for the sub-nanosecond range, datasheet in german language |
Siemens |
| 219 |
AEY30B |
Tunnel diodes for low-noise amplifiers and fast switches for the sub-nanosecond range, datasheet in german language |
Siemens |
| 220 |
AEY30C |
Tunnel diodes for low-noise amplifiers and fast switches for the sub-nanosecond range, datasheet in german language |
Siemens |
| 221 |
AEY30C |
Tunnel diodes for low-noise amplifiers and fast switches for the sub-nanosecond range, datasheet in german language |
Siemens |
| 222 |
AEY30D |
Tunnel diodes for low-noise amplifiers and fast switches for the sub-nanosecond range, datasheet in german language |
Siemens |
| 223 |
AEY30D |
Tunnel diodes for low-noise amplifiers and fast switches for the sub-nanosecond range, datasheet in german language |
Siemens |
| 224 |
AEY31 |
Subminiature germanium bonded backward diodes for use up to J band |
Mullard |
| 225 |
AEY31A |
Subminiature germanium bonded backward diodes for use up to J band |
Mullard |
| 226 |
AHY10A |
Germanium magneto diodes for control applications |
AEG-TELEFUNKEN |
| 227 |
AHY10B |
Germanium magneto diodes for control applications |
AEG-TELEFUNKEN |
| 228 |
AHY10C |
Germanium magneto diodes for control applications |
AEG-TELEFUNKEN |
| 229 |
AHY10D |
Germanium magneto diodes for control applications |
AEG-TELEFUNKEN |
| 230 |
AN-170 |
Mounting Techniques For Multidigit LED Numeric Displays - Application Note |
National Semiconductor |
| 231 |
AN-214 |
GROUND RULES FOR HIGH SPEED CIRCUITS |
Analog Devices |
| 232 |
AN-548A |
Application Note - Microstrip design techniques for UHF amplifiers |
Motorola |
| 233 |
AN-749 |
Application Note - Broadband transformers and power combining techniques for RF |
Motorola |
| 234 |
AN-938 |
Application Note - Mounting techniques for powermacro transistor |
Motorola |
| 235 |
AN004 |
Voltage References for Crystal A/D Converters |
Cirrus Logic |
| 236 |
AN011 |
Jitter Testing Procedures for Compliance with AT&T 62411 |
Cirrus Logic |
| 237 |
AN1015 |
MCUS - SOFTWARE TECHNIQUES FOR IMPROVING MICROCONTROLLER EMC PERFORMANCE |
SGS Thomson Microelectronics |
| 238 |
AN1075 |
ST9 - USING THE ST9+ MEMORY MANAGEMENT UNIT (EXAMPLES FOR ST92195 AND ST92R195) |
SGS Thomson Microelectronics |
| 239 |
AN18 |
Layout and Design Rules for Data Converters and Other Mixed-Signal Devices |
Cirrus Logic |
| 240 |
AN446 |
SMART POWER PROCESSES FOR LSI CIRCUITS |
SGS Thomson Microelectronics |
| | | |
