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Datasheets for ESIG

Datasheets found :: 11498
Page: | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 |
No. Part Name Description Manufacturer
211 2N1725 NPN silicon power transistor designed for switching and aplifier applications Motorola
212 2N1742 Germanium PNP high frequency transistor designed for driver applications, small-signal amplification, wide band video aplifiers, and VHF/UHF oscillators Motorola
213 2N1893 NPN silicon annular transistor designed for medium-power applications Motorola
214 2N1990 NPN silicon transistor designed for driving neon display tubes Motorola
215 2N1990S NPN silicon transistor designed for driving neon display tubes Motorola
216 2N2224 NPN silicon annular transistor designed primarly for high speed switching applications Motorola
217 2N2242 NPN silicon annular transistor designed for high-speed, low-power saturated switching applications Motorola
218 2N2273 High-frequency germanium PNP transistor, designed for mlitary and high-reliability industrial as well as comercial VHF amplifier applications Motorola
219 2N2322 All-diffused PNPN thyristor designed for gating operation in mA/µA signal or detection circuits Motorola
220 2N2323 All-diffused PNPN thyristor designed for gating operation in mA/µA signal or detection circuits Motorola
221 2N2324 All-diffused PNPN thyristor designed for gating operation in mA/µA signal or detection circuits Motorola
222 2N2325 All-diffused PNPN thyristor designed for gating operation in mA/µA signal or detection circuits Motorola
223 2N2326 All-diffused PNPN thyristor designed for gating operation in mA/µA signal or detection circuits Motorola
224 2N2405 NPN silicon annular transistor designed for medium-power applications Motorola
225 2N2453 Dual NPN silicon transistor designed for differential amplifier applications Motorola
226 2N2453A Dual NPN silicon transistor designed for differential amplifier applications Motorola
227 2N2639 Dual NPN silicon annular transistor designed for low-level, low-noise differential amplifiers Motorola
228 2N2640 Dual NPN silicon annular transistor designed for low-level, low-noise differential amplifiers Motorola
229 2N2641 Dual NPN silicon annular transistor designed for low-level, low-noise differential amplifiers Motorola
230 2N2642 Dual NPN silicon annular transistor designed for low-level, low-noise differential amplifiers Motorola
231 2N2643 Dual NPN silicon annular transistor designed for low-level, low-noise differential amplifiers Motorola
232 2N2644 Dual NPN silicon annular transistor designed for low-level, low-noise differential amplifiers Motorola
233 2N2646 Silicon annular PN unijunction transistor designed for use in pulse and timing circuits, sensing circuits and thyristor trigger circuits Motorola
234 2N2647 Silicon annular PN unijunction transistor designed for use in pulse and timing circuits, sensing circuits and thyristor trigger circuits Motorola
235 2N2728 PNP germanium high-current power transistor especially designed for solar cells, thermo-electric generators, sea cells, fuel cells, and 1.5-volt batteries Motorola
236 2N2802 Dual PNP silicon annular transistors designed for differential applications Motorola
237 2N2803 Dual PNP silicon annular transistors designed for differential applications Motorola
238 2N2804 Dual PNP silicon annular transistors designed for differential applications Motorola
239 2N2805 Dual PNP silicon annular transistors designed for differential applications Motorola
240 2N2806 Dual PNP silicon annular transistors designed for differential applications Motorola


Datasheets found :: 11498
Page: | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 |



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