| No. |
Part Name |
Description |
Manufacturer |
| 211 |
2N2222AUBG |
Rad-Resistant NPN bipolar transistor 40 V, 0.8 A |
ST Microelectronics |
| 212 |
2N2222AUBT |
Rad-Resistant NPN bipolar transistor 40 V, 0.8 A |
ST Microelectronics |
| 213 |
2N2573 |
Industrial-type, silicon controlled rectifier in a diamond package for applications requiring a high surge-current rating or low thermal resistance |
Motorola |
| 214 |
2N2574 |
Industrial-type, silicon controlled rectifier in a diamond package for applications requiring a high surge-current rating or low thermal resistance |
Motorola |
| 215 |
2N2575 |
Industrial-type, silicon controlled rectifier in a diamond package for applications requiring a high surge-current rating or low thermal resistance |
Motorola |
| 216 |
2N2576 |
Industrial-type, silicon controlled rectifier in a diamond package for applications requiring a high surge-current rating or low thermal resistance |
Motorola |
| 217 |
2N2577 |
Industrial-type, silicon controlled rectifier in a diamond package for applications requiring a high surge-current rating or low thermal resistance |
Motorola |
| 218 |
2N2578 |
Industrial-type, silicon controlled rectifier in a diamond package for applications requiring a high surge-current rating or low thermal resistance |
Motorola |
| 219 |
2N2579 |
Industrial-type, silicon controlled rectifier in a diamond package for applications requiring a high surge-current rating or low thermal resistance |
Motorola |
| 220 |
2N5304 |
Radiation-Resistant NPN Silicon Power Transistor 10A 40V 25W |
Motorola |
| 221 |
2SA1007 |
Silicon epitaxial transistor built in emitter balast resistors, designed for use in high power high fidelity audio amplifier applications |
NEC |
| 222 |
2SA1007A |
Silicon epitaxial transistor built in emitter balast resistors, designed for use in high power high fidelity audio amplifier applications |
NEC |
| 223 |
2SA1348 |
Switching Applications(with Bias Resistance) |
SANYO |
| 224 |
2SA1518 |
PNP Epitaxial Planar Silicon Transistors Switching Applications (With Bias Resistance) |
SANYO |
| 225 |
2SA1519 |
PNP Epitaxial Planar Silicon Transistors Switching Applications (with Bias Resistance) |
SANYO |
| 226 |
2SA1520 |
PNP Epitaxial Planar Silicon Transistors Switching Applications (with Bias Resistance) |
SANYO |
| 227 |
2SA1522 |
PNP Epitaxial Planar Silicon Transistors Switching Applications (with Bias Resistance) |
SANYO |
| 228 |
2SA1523 |
PNP Epitaxial Planar Silicon Transistors Switching Applications (with Bias Resistance) |
SANYO |
| 229 |
2SA1524 |
PNP Epitaxial Planar Silicon Transistors Switching Applications (with Bias Resistance) |
SANYO |
| 230 |
2SA1525 |
PNP Epitaxial Planar Silicon Transistors Switching Applications (with Bias Resistance) |
SANYO |
| 231 |
2SA1526 |
PNP Epitaxial Planar Silicon Transistors Switching Applications (with Bias Resistance) |
SANYO |
| 232 |
2SA1527 |
PNP Epitaxial Planar Silicon Transistors Switching Applications (with Bias Resistance) |
SANYO |
| 233 |
2SA1528 |
PNP Epitaxial Planar Silicon Transistors Switching Applications (with Bias Resistance) |
SANYO |
| 234 |
2SA1529 |
PNP Epitaxial Planar Silicon Transistors Switching Applications (with Bias Resistance) |
SANYO |
| 235 |
2SA1581 |
Switching Applications(with Bias Resistance) |
Unknow |
| 236 |
2SC2337 |
Silicon epitaxial transistor built in emitter balast resistors, designed for use in high power high fidelity audio amplifier applications |
NEC |
| 237 |
2SC2337A |
Silicon epitaxial transistor built in emitter balast resistors, designed for use in high power high fidelity audio amplifier applications |
NEC |
| 238 |
2SC3402 |
Switching Applications(with Bias Resistance) |
SANYO |
| 239 |
2SC3912 |
NPN Epitaxial Planar Silicon Transistors Switching Applications (With Bias Resistance) |
SANYO |
| 240 |
2SC3913 |
NPN Epitaxial Planar Silicon Transistors Switching Applications (with Bias Resistance) |
SANYO |
| | | |
