| No. |
Part Name |
Description |
Manufacturer |
| 211 |
BF506 |
PNP Silicon RF Transistor (For VHF mixer and oscillator stages) |
Siemens |
| 212 |
BF961 |
Trans RF MOSFET N-CH 20V 0.03A 4-Pin TO-50 |
New Jersey Semiconductor |
| 213 |
BFR91 |
Epitaxial planar NPN transistor, designed for VHF-UHF medium level amplifier up to 1.5GHz |
SGS-ATES |
| 214 |
BGC405 |
Active Biased RF Transistor (RF MMIC) |
Infineon |
| 215 |
BGY12D-1F |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
| 216 |
BGY12E-1G |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
| 217 |
BGY12F-2H |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
| 218 |
BGY12F-2I |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
| 219 |
BGY13D-1E |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
| 220 |
BGY13E-1F |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
| 221 |
BGY13F-2H |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
| 222 |
BGY13FA-1G |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
| 223 |
BGY14D-1E |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
| 224 |
BGY14E-1F |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
| 225 |
BGY14FA1G |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
| 226 |
BGY26D-1E |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
| 227 |
BGY26E-1F |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
| 228 |
BGY26FA-1G |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
| 229 |
BGY27DA-1D |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
| 230 |
BGY27DB-1E |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
| 231 |
BGY27E-1F |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
| 232 |
BLF145 |
Trans RF MOSFET N-CH 65V 6A 4-Pin SOT-123A |
New Jersey Semiconductor |
| 233 |
BLF147 |
Trans RF MOSFET N-CH 65V 25A 4-Pin CRFM |
New Jersey Semiconductor |
| 234 |
BLF177 |
Trans RF MOSFET N-CH 125V 16A 4-Pin CRFM |
New Jersey Semiconductor |
| 235 |
BLF242 |
Trans RF MOSFET N-CH 65V 1A 4-Pin SOT-123A |
New Jersey Semiconductor |
| 236 |
BLF278 |
Trans RF MOSFET N-CH 125V 18A 5-Pin CDFM |
New Jersey Semiconductor |
| 237 |
BLF521 |
Trans RF MOSFET N-CH 40V 1A 4-Pin CRDB |
New Jersey Semiconductor |
| 238 |
BP1042 |
70MHz SAW Filter |
RF Monolithics Inc |
| 239 |
BP1042A |
70MHz SAW Filter |
RF Monolithics Inc |
| 240 |
CMF-07 |
MODEL CMF Metal Film Resistors |
Vishay |
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