No. |
Part Name |
Description |
Manufacturer |
211 |
HDF1215S |
3 Watt HD Series |
Shindengen |
212 |
IRF121 |
N-Channel Power MOSFETs/ 11 A/ 60-100 V |
Fairchild Semiconductor |
213 |
IRF121 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 32A. |
General Electric Solid State |
214 |
IRF121 |
8.0A and 9.2A/ 80V and 100V/ 0.27 and 0.36 Ohm/ N-Channel/ Power MOSFETs |
Intersil |
215 |
IRF121 |
Trans MOSFET N-CH 80V 9.2A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
216 |
IRF121 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
217 |
IRFF121 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 50V. Continuous drain current 6.0A. |
General Electric Solid State |
218 |
IRFF121 |
MOSPOWER N-Channel Enhancement Mode Transistor 60V 6A |
Siliconix |
219 |
K9F1216D0A |
64M x 8 Bit , 32M x 16 Bit NAND Flash Memory |
Samsung Electronic |
220 |
K9F1216D0A-P |
64M x 8 Bit , 32M x 16 Bit NAND Flash Memory |
Samsung Electronic |
221 |
K9F1216D0A-Y |
64M x 8 Bit , 32M x 16 Bit NAND Flash Memory |
Samsung Electronic |
222 |
K9F1216Q0A-DCB0 |
32M x 16 bit NAND flash memory, 1.70 - 1.95V |
Samsung Electronic |
223 |
K9F1216Q0A-DIB0 |
32M x 16 bit NAND flash memory, 1.70 - 1.95V |
Samsung Electronic |
224 |
K9F1216Q0A-HCB0 |
32M x 16 bit NAND flash memory, 1.70 - 1.95V |
Samsung Electronic |
225 |
K9F1216Q0A-HIB0 |
32M x 16 bit NAND flash memory, 1.70 - 1.95V |
Samsung Electronic |
226 |
K9F1216U0A |
64M x 8 Bit , 32M x 16 Bit NAND Flash Memory |
Samsung Electronic |
227 |
K9F1216U0A |
64M x 8 Bit , 32M x 16 Bit NAND Flash Memory |
Samsung Electronic |
228 |
K9F1216U0A-DCB0 |
32M x 16 bit NAND flash memory, 2.7 - 3.6V |
Samsung Electronic |
229 |
K9F1216U0A-DIB0 |
32M x 16 bit NAND flash memory, 2.7 - 3.6V |
Samsung Electronic |
230 |
K9F1216U0A-HCB0 |
32M x 16 bit NAND flash memory, 2.7 - 3.6V |
Samsung Electronic |
231 |
K9F1216U0A-HIB0 |
32M x 16 bit NAND flash memory, 2.7 - 3.6V |
Samsung Electronic |
232 |
K9F1216U0A-P |
64M x 8 Bit , 32M x 16 Bit NAND Flash Memory |
Samsung Electronic |
233 |
K9F1216U0A-PCB0 |
32M x 16 bit NAND flash memory, 2.7 - 3.6V |
Samsung Electronic |
234 |
K9F1216U0A-PIB0 |
32M x 16 bit NAND flash memory, 2.7 - 3.6V |
Samsung Electronic |
235 |
K9F1216U0A-Y |
64M x 8 Bit , 32M x 16 Bit NAND Flash Memory |
Samsung Electronic |
236 |
K9F1216U0A-YCB0 |
32M x 16 bit NAND flash memory, 2.7 - 3.6V |
Samsung Electronic |
237 |
K9F1216U0A-YIB0 |
32M x 16 bit NAND flash memory, 2.7 - 3.6V |
Samsung Electronic |
238 |
K9F1216X0A |
64M x 8 Bit , 32M x 16 Bit NAND Flash Memory |
Samsung Electronic |
239 |
LC86F1216A |
8-Bit Single Chip Microcontroller with 16K-Byte ROM and 1220-Byte RAM On Chip |
SANYO |
240 |
MF1210 |
Band wide:150kHz ~ 30MHz, 2 stage filter |
DENSEI-LAMBDA |
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