DatasheetCatalog
  |   Home   |   All manufacturers   |   By Category   |  
FR DE ES IT PT RU

   
Quick jump to: 1N 2N 2SA 2SC 74 AD BA BC BD BF BU CXA HCF IRF KA KIA LA LM MC NE ST STK TDA TL UA
LM317 LM339 MAX232 NE555 LM324 8051 7805 2N3055 LM358 2N2222 74LS138 TDA7294 TL431 IRF540 1N4148

Datasheets for F121

Datasheets found :: 270
Page: | 4 | 5 | 6 | 7 | 8 | 9 |
No. Part Name Description Manufacturer
211 HDF1215S 3 Watt HD Series Shindengen
212 IRF121 N-Channel Power MOSFETs/ 11 A/ 60-100 V Fairchild Semiconductor
213 IRF121 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 32A. General Electric Solid State
214 IRF121 8.0A and 9.2A/ 80V and 100V/ 0.27 and 0.36 Ohm/ N-Channel/ Power MOSFETs Intersil
215 IRF121 Trans MOSFET N-CH 80V 9.2A 3-Pin(2+Tab) TO-3 New Jersey Semiconductor
216 IRF121 N-CHANNEL POWER MOSFETS Samsung Electronic
217 IRFF121 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 50V. Continuous drain current 6.0A. General Electric Solid State
218 IRFF121 MOSPOWER N-Channel Enhancement Mode Transistor 60V 6A Siliconix
219 K9F1216D0A 64M x 8 Bit , 32M x 16 Bit NAND Flash Memory Samsung Electronic
220 K9F1216D0A-P 64M x 8 Bit , 32M x 16 Bit NAND Flash Memory Samsung Electronic
221 K9F1216D0A-Y 64M x 8 Bit , 32M x 16 Bit NAND Flash Memory Samsung Electronic
222 K9F1216Q0A-DCB0 32M x 16 bit NAND flash memory, 1.70 - 1.95V Samsung Electronic
223 K9F1216Q0A-DIB0 32M x 16 bit NAND flash memory, 1.70 - 1.95V Samsung Electronic
224 K9F1216Q0A-HCB0 32M x 16 bit NAND flash memory, 1.70 - 1.95V Samsung Electronic
225 K9F1216Q0A-HIB0 32M x 16 bit NAND flash memory, 1.70 - 1.95V Samsung Electronic
226 K9F1216U0A 64M x 8 Bit , 32M x 16 Bit NAND Flash Memory Samsung Electronic
227 K9F1216U0A 64M x 8 Bit , 32M x 16 Bit NAND Flash Memory Samsung Electronic
228 K9F1216U0A-DCB0 32M x 16 bit NAND flash memory, 2.7 - 3.6V Samsung Electronic
229 K9F1216U0A-DIB0 32M x 16 bit NAND flash memory, 2.7 - 3.6V Samsung Electronic
230 K9F1216U0A-HCB0 32M x 16 bit NAND flash memory, 2.7 - 3.6V Samsung Electronic
231 K9F1216U0A-HIB0 32M x 16 bit NAND flash memory, 2.7 - 3.6V Samsung Electronic
232 K9F1216U0A-P 64M x 8 Bit , 32M x 16 Bit NAND Flash Memory Samsung Electronic
233 K9F1216U0A-PCB0 32M x 16 bit NAND flash memory, 2.7 - 3.6V Samsung Electronic
234 K9F1216U0A-PIB0 32M x 16 bit NAND flash memory, 2.7 - 3.6V Samsung Electronic
235 K9F1216U0A-Y 64M x 8 Bit , 32M x 16 Bit NAND Flash Memory Samsung Electronic
236 K9F1216U0A-YCB0 32M x 16 bit NAND flash memory, 2.7 - 3.6V Samsung Electronic
237 K9F1216U0A-YIB0 32M x 16 bit NAND flash memory, 2.7 - 3.6V Samsung Electronic
238 K9F1216X0A 64M x 8 Bit , 32M x 16 Bit NAND Flash Memory Samsung Electronic
239 LC86F1216A 8-Bit Single Chip Microcontroller with 16K-Byte ROM and 1220-Byte RAM On Chip SANYO
240 MF1210 Band wide:150kHz ~ 30MHz, 2 stage filter DENSEI-LAMBDA


Datasheets found :: 270
Page: | 4 | 5 | 6 | 7 | 8 | 9 |



© 2024 - www Datasheet Catalog com