No. |
Part Name |
Description |
Manufacturer |
211 |
N74F776A |
Pi-bus transceiver |
Philips |
212 |
N74F776F |
Pi-bus transceiver |
Philips |
213 |
N74F776N |
Pi-bus transceiver |
Philips |
214 |
N74F777A |
Triple bidirectional latched bus transceiver 3-State open collector |
Philips |
215 |
N74F777N |
Triple bidirectional latched bus transceiver 3-State open collector |
Philips |
216 |
N74F779D |
8-bit bidirectional binary counter 3-State |
Philips |
217 |
N74F779N |
8-bit bidirectional binary counter 3-State |
Philips |
218 |
NX8562LF770-BA |
CW InGaAsP MQW DFB laser diode module for DWDM applications (20 mW min). ITU-T wavelength 1577.02 nm. Frequency 190.10 THz. Anode floating. FC-PC connector. |
NEC |
219 |
NX8562LF778-BA |
CW InGaAsP MQW DFB laser diode module for DWDM applications (20 mW min). ITU-T wavelength 1577.85 nm. Frequency 190.00 THz. Anode floating. FC-PC connector. |
NEC |
220 |
NX8563LF770-BA |
CW InGaAsP MQW DFB laser diode module for DWDM applications (10 mW min). ITU-T wavelength 1577.02 nm. Frequency 190.10 THz. FC-PC connector. Anode floating. |
NEC |
221 |
NX8563LF778-BA |
CW InGaAsP MQW DFB laser diode module for DWDM applications (10 mW min). ITU-T wavelength 1577.85 nm. Frequency 190.00 THz. FC-PC connector. Anode floating. |
NEC |
222 |
PB-IRF7701 |
Leaded -12V Single P-Channel HEXFET Power MOSFET in a TSSOP-8 package |
International Rectifier |
223 |
PB-IRF7702 |
Leaded -12V Single P-Channel HEXFET Power MOSFET in a TSSOP-8 package |
International Rectifier |
224 |
PB-IRF7703 |
Leaded -40V Single P-Channel HEXFET Power MOSFET in a TSSOP-8 package |
International Rectifier |
225 |
PB-IRF7704 |
Leaded -40V Single P-Channel HEXFET Power MOSFET in a TSSOP-8 package |
International Rectifier |
226 |
PB-IRF7705 |
Leaded -30V Single P-Channel HEXFET Power MOSFET in a TSSOP-8 package |
International Rectifier |
227 |
PB-IRF7726 |
Leaded -30V Single P-Channel HEXFET Power MOSFET in a Micro 8 package |
International Rectifier |
228 |
PB-IRF7750 |
Leaded -20V Dual P-Channel HEXFET Power MOSFET in a TSSOP-8 package |
International Rectifier |
229 |
PB-IRF7751 |
Leaded -30V Dual P-Channel HEXFET Power MOSFET in a TSSOP-8 package |
International Rectifier |
230 |
PB-IRF7754 |
Leaded -12V Dual P-Channel HEXFET Power MOSFET in a TSSOP-8 package |
International Rectifier |
231 |
PB-IRF7755 |
Leaded -20V Dual P-Channel HEXFET Power MOSFET in a TSSOP-8 package |
International Rectifier |
232 |
PB-IRF7756 |
Leaded -12V Dual P-Channel HEXFET Power MOSFET in a TSSOP-8 package |
International Rectifier |
233 |
PB-IRF7757 |
Leaded 20V Dual N-Channel HEXFET Power MOSFET in a TSSOP-8 package |
International Rectifier |
234 |
PIC16C77-04/L |
A newer device is available. Please consider PIC16F77. This powerful (200 nanosecond instruction execution) yet easy-to-program ... |
Microchip |
235 |
PIC16C77-04/L |
A newer device is available. Please consider PIC16F77. This powerful (200 nanosecond instruction execution) yet easy-to-program ... |
Microchip |
236 |
PIC16C77-04/P |
A newer device is available. Please consider PIC16F77. This powerful (200 nanosecond instruction execution) yet easy-to-program ... |
Microchip |
237 |
PIC16C77-04/P |
A newer device is available. Please consider PIC16F77. This powerful (200 nanosecond instruction execution) yet easy-to-program ... |
Microchip |
238 |
PIC16C77-04/PQ |
A newer device is available. Please consider PIC16F77. This powerful (200 nanosecond instruction execution) yet easy-to-program ... |
Microchip |
239 |
PIC16C77-04/PQ |
A newer device is available. Please consider PIC16F77. This powerful (200 nanosecond instruction execution) yet easy-to-program ... |
Microchip |
240 |
PIC16C77-04/PT |
A newer device is available. Please consider PIC16F77. This powerful (200 nanosecond instruction execution) yet easy-to-program ... |
Microchip |
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